FDD6632 N-Channel Logic Level UltraFET Power MOSFET, 30V drain-source voltage, 9A continuous drain current, 70mOhm on-resistance at 10V. Surface mount DPAK package.
Mfr Part #:

FDD6632

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Logic Level UltraFET Power MOSFET, 30V drain-source voltage, 9A continuous drain current, 70mOhm on-resistance at 10V. Surface mount DPAK package.
✓ Total Stock: 1,948 pcs
$ Price Range: $0.21

FDD6632 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,948 pcs
1948 pcs On Request 1 On Request On Request 02+ On Request On Request

FDD6632 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Technology
Turn Off Time
Turn On Time
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6632 Description

Short technical summary and product information.

The FDD6632 is an N-Channel Logic Level UltraFET Trench Power MOSFET from On Semiconductor (formerly Fairchild Semiconductor). It features a drain-source breakdown voltage of 30V and a continuous drain current of 9A at 25°C with VGS=10V. The on-resistance is typically 58mOhm and maximum 70mOhm at VGS=10V, ID=9A. At logic-level gate drive (VGS=4.5V), the typical on-resistance is 90mOhm with 6A drain current.

 

This device employs advanced trench MOSFET technology to achieve low gate charge (typical 2.6nC total at VGS=5V) and fast switching performance. Typical switching times include 10ns turn-on delay, 41ns rise time, 10ns turn-off delay, and 23ns fall time at VGS=4.5V. The input capacitance is 255pF typical at VDS=15V.

 

The MOSFET is housed in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. It is rated for operation from -55°C to 175°C junction temperature. Maximum power dissipation is 15W at case temperature 25°C. Thermal resistance from junction to case is 10°C/W, and junction to ambient is 100°C/W (52°C/W with 1in² copper pad).

 

Optimized for switching applications, the FDD6632 improves efficiency in DC/DC converters and allows operation at higher switching frequencies. It is suitable for power management in portable devices, load switching, and other high-frequency power conversion circuits.

FDD6632 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: N-Channel Logic Level UltraFET Trench Power MOSFET, 30V, 9A, 70mOhm
Subcategory: Single

FDD6632 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD6632 Estimated Pricing

Qty Low High
1,397+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6632 Features

  • N-Channel logic level trench MOSFET.
  • 30V drain-source breakdown voltage.
  • 9A continuous drain current at 25°C.
  • Low on-resistance of 70mOhm at 10V.
  • Fast switching with low gate charge.

FDD6632 Applications

  • Used in DC/DC converter circuits.
  • Suitable for high-frequency switching applications.
  • Ideal for power management in portable devices.
  • Can be used in load switching applications.

FDD6632 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD6632?

The drain-source breakdown voltage (Vdss) is 30V minimum.

What is the maximum continuous drain current?

At TC=25°C with VGS=10V, the maximum continuous drain current is 9A. At TC=100°C with VGS=4.5V, it is 6A.

What is the on-resistance of the FDD6632?

The maximum on-resistance is 70mOhm at VGS=10V, ID=9A. Typical is 58mOhm. At VGS=4.5V, ID=6A, maximum is 110mOhm, typical 90mOhm.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package does the FDD6632 come in?

The device is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package. The supplier device package is TO-252AA.

Is the FDD6632 RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at ID=250µA.

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