| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,060 pcs
|
2060 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Medical Grade | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The FDD6530A is an N-Channel MOSFET from On Semiconductor. It features a maximum drain-source voltage of 20V and a continuous drain current of 21A at ambient temperature. The device has a low on-resistance of 32 mOhm at 8A and 4.5V gate drive. Gate threshold voltage is 1.2V at 250µA. Total gate charge is 9 nC at 4.5V, and input capacitance is 710 pF at 10V. The MOSFET is designed for surface mount assembly in a TO-252 (DPak) package. Operating junction temperature range is -55°C to 175°C. Maximum power dissipation is 3.3W at ambient temperature and 33W at case temperature. The device is RoHS3 compliant and has MSL level 1. Suitable for low-voltage switching applications.
20V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.
-55°C to 175°C (junction).
Yes, RoHS3 compliant (unverified).
1.2V at 250µA.
32 mOhm at 8A and 4.5V.
21A at ambient temperature.