FDD6512A N-Channel 20V MOSFET with 36A continuous drain current (Tc=25°C) and low 21mΩ on-resistance at 4.5V gate drive. Designed for DC/DC converters and motor drives.
Mfr Part #:

FDD6512A

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel 20V MOSFET with 36A continuous drain current (Tc=25°C) and low 21mΩ on-resistance at 4.5V gate drive. Designed for DC/DC converters and motor drives.
✓ Total Stock: 185 pcs
$ Price Range: $0.64

FDD6512A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
185 pcs
185 pcs On Request 1 On Request On Request 0927+ On Request On Request

FDD6512A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6512A Description

Short technical summary and product information.

The FDD6512A is a 20V N-Channel PowerTrench MOSFET from On Semiconductor, optimized for high efficiency in DC/DC converters and motor drives. It features a maximum drain-source voltage of 20V and a continuous drain current of 36A at case temperature 25°C (10.7A at ambient 25°C). Pulsed drain current capability is 100A. The device offers low on-resistance: 21mΩ maximum at Vgs=4.5V and Id=10.7A, and 31mΩ maximum at Vgs=2.5V and Id=9.1A. Typical gate charge is 12nC at Vgs=4.5V, enabling fast switching with typical turn-on delay of 8ns. Input capacitance is 1082pF typical at Vds=10V. The MOSFET is avalanche rated with a single-pulse energy of 90mJ. It is housed in a surface-mount DPAK (TO-252) package with a supplier device package of TO-252AA. Operating junction temperature range is -55°C to 175°C. Thermal resistance junction-to-case is 3.5°C/W. This part is suitable for synchronous and conventional PWM controller topologies.

FDD6512A Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD6512A 20V N-Channel PowerTrench MOSFET
Subcategory: N-Channel MOSFET

FDD6512A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD6512A Estimated Pricing

Qty Low High
466+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD6512A Features

  • 36A continuous drain current at 25°C case temperature.
  • Low 21mΩ on-resistance at 4.5V gate drive.
  • Low gate charge of 12nC typical for fast switching.
  • Avalanche rated for 90mJ single pulse.
  • Surface mount DPAK (TO-252) package.

FDD6512A Applications

  • Ideal for DC/DC converter applications.
  • Suitable for motor drive circuits.
  • Used in synchronous and conventional PWM controllers.

FDD6512A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD6512A?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating?

Continuous drain current is 36A at case temperature 25°C and 10.7A at ambient temperature 25°C.

What is the on-resistance of the FDD6512A?

Maximum on-resistance is 21mΩ at Vgs=4.5V and Id=10.7A, and 31mΩ at Vgs=2.5V and Id=9.1A.

What is the typical gate charge?

Typical gate charge (Qg) is 12nC at Vgs=4.5V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FDD6512A available in?

The FDD6512A is available in a surface-mount DPAK (TO-252) package, also known as TO-252AA.

Is the FDD6512A RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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