| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,898 pcs
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6898 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDD6296 is an N-Channel Power MOSFET from On Semiconductor, designed for efficient switching and power management. It features a drain-source voltage of 30V and a continuous drain current of 15A at ambient temperature or 50A at case temperature. The device offers a low on-resistance of 8.8mOhm at 10V gate drive, minimizing conduction losses. It is suitable for DC-DC converters, load switching, and other power applications. The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, compatible with standard automated assembly processes. The operating junction temperature range is -55°C to 175°C, ensuring reliable performance in harsh environments. The device is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited). Gate charge is 31.5nC at 10V, and input capacitance is 1440pF at 15V, indicating moderate switching speeds.
30V.
15A at 25°C ambient temperature, 50A at 25°C case temperature.
8.8mOhm max at 15A, 10V.
-55°C to 175°C junction temperature.
TO-252-3 (DPak) surface mount.
The RoHS status is listed as RoHS3 Compliant, but unverified.
31.5nC max at 10V.