| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD6035AL is an N-channel power MOSFET using metal-oxide semiconductor technology from On Semiconductor. It is designed for a wide range of power switching and amplification applications. The device is rated for a maximum drain-to-source voltage of 30 V and a continuous drain current of 12 A at 25°C ambient temperature, or 46 A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 12 mΩ at a gate-to-source voltage of 10 V and drain current of 12 A, with drive voltage support of 4.5 V and 10 V. Maximum gate charge is 18 nC at Vgs = 5 V, and input capacitance is 1230 pF at Vds = 15 V. The gate threshold voltage is 3 V maximum at 250 µA, and the gate-source voltage rating is ±20 V. Power dissipation is rated at 1.5 W at ambient temperature and 56 W at case temperature (both at 25°C).
The device comes in a TO-252-3 (DPAK) surface-mount package, also known as SC-63, with a supplier device package of TO-252. It operates over a junction temperature range of -55°C to 175°C. The surface-mount package enables compact, low-profile designs for power management, load switching, and DC-DC conversion circuits.
The maximum drain-to-source voltage is 30 V.
The FDD6035AL is offered in a TO-252-3 (DPAK) surface-mount package, also known as SC-63.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant in the existing product data.
The continuous drain current is 12 A at 25°C ambient temperature, and 46 A at 25°C case temperature.
The maximum on-resistance is 12 mΩ at a drain current of 12 A and a gate-source voltage of 10 V.
The gate charge is 18 nC maximum at a gate-source voltage of 5 V.