FDD6035AL The FDD6035AL is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source voltage rating, 12A continuous drain current (at 25°C Ta), and 12mΩ maximum on-resistance.
Mfr Part #:

FDD6035AL

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDD6035AL is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source voltage rating, 12A continuous drain current (at 25°C Ta), and 12mΩ maximum on-resistance.
✓ Total Stock: 452,000 pcs

FDD6035AL Available from 1 distributor

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FDD6035AL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD6035AL Description

Short technical summary and product information.

The FDD6035AL is an N-channel power MOSFET using metal-oxide semiconductor technology from On Semiconductor. It is designed for a wide range of power switching and amplification applications. The device is rated for a maximum drain-to-source voltage of 30 V and a continuous drain current of 12 A at 25°C ambient temperature, or 46 A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 12 mΩ at a gate-to-source voltage of 10 V and drain current of 12 A, with drive voltage support of 4.5 V and 10 V. Maximum gate charge is 18 nC at Vgs = 5 V, and input capacitance is 1230 pF at Vds = 15 V. The gate threshold voltage is 3 V maximum at 250 µA, and the gate-source voltage rating is ±20 V. Power dissipation is rated at 1.5 W at ambient temperature and 56 W at case temperature (both at 25°C).

 

The device comes in a TO-252-3 (DPAK) surface-mount package, also known as SC-63, with a supplier device package of TO-252. It operates over a junction temperature range of -55°C to 175°C. The surface-mount package enables compact, low-profile designs for power management, load switching, and DC-DC conversion circuits.

FDD6035AL Quick Information

Product Type: Single N-Channel Power MOSFET
Series: PowerTrench
Canonical Name: Single N-Channel Power MOSFET
Subcategory: Single MOSFET

FDD6035AL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD6035AL Features

  • N-channel MOSFET with 30V drain-source voltage.
  • 12A continuous drain current rating.
  • 12mΩ maximum on-resistance at 10V.
  • Surface-mount TO-252 (DPAK) package.
  • Operating junction temperature to 175°C.

FDD6035AL Applications

  • Suitable for DC-DC converter power stages.
  • Used for low-side load switching.
  • Fits power management in compact designs.

FDD6035AL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDD6035AL?

The maximum drain-to-source voltage is 30 V.

What package is the FDD6035AL available in?

The FDD6035AL is offered in a TO-252-3 (DPAK) surface-mount package, also known as SC-63.

What is the operating junction temperature range of the FDD6035AL?

The operating junction temperature range is -55°C to 175°C.

Is the FDD6035AL RoHS compliant?

The part is listed as RoHS3 compliant in the existing product data.

What is the continuous drain current rating of the FDD6035AL?

The continuous drain current is 12 A at 25°C ambient temperature, and 46 A at 25°C case temperature.

What is the maximum on-resistance of the FDD6035AL?

The maximum on-resistance is 12 mΩ at a drain current of 12 A and a gate-source voltage of 10 V.

What is the gate charge of the FDD6035AL?

The gate charge is 18 nC maximum at a gate-source voltage of 5 V.

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