FDD5N60NZTM This is a 600V N-Channel power MOSFET from ON Semiconductor. It delivers 4A continuous drain current and features a low on-resistance of 2Ohm.
Mfr Part #:

FDD5N60NZTM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
This is a 600V N-Channel power MOSFET from ON Semiconductor. It delivers 4A continuous drain current and features a low on-resistance of 2Ohm.
✓ Total Stock: 106,072 pcs
$ Price Range: $0.90 - $2.17

FDD5N60NZTM Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDD5N60NZTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD5N60NZTM Description

Short technical summary and product information.

The FDD5N60NZTM is a 600V N-Channel power MOSFET manufactured by ON Semiconductor. Designed for efficient power switching, it offers a continuous drain current of 4A at 25°C case temperature. The device features a maximum drain-source on-resistance of 2Ohm at 10V gate drive, ensuring low conduction losses.

 

With a maximum gate threshold voltage of 5V and a gate charge of 13nC, the MOSFET is suitable for medium-voltage switching applications. Its input capacitance is limited to 600pF, contributing to manageable switching losses. The device is rated for a maximum power dissipation of 83W at 25°C case temperature.

 

This MOSFET comes in a surface-mount DPAK package (TO-252AA), making it compatible with automated assembly processes. It operates over a junction temperature range of -55°C to 150°C, providing robust performance in demanding environments. The gate-source voltage rating is ±25V.

FDD5N60NZTM Quick Information

Product Type: Single N-Channel MOSFET
Series: UniFET II
Canonical Name: FDD5N60NZTM N-Channel MOSFET
Subcategory: Single N-Channel Power MOSFET

FDD5N60NZTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD5N60NZTM Estimated Pricing

Qty Low High
1+ $2.17 $2.17
10+ $1.36 $1.36
100+ $0.90 $0.90
2,500+ $0.90 $0.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD5N60NZTM Features

  • N-Channel MOSFET with 600V drain-source rating.
  • Continuous drain current of 4A at 25°C case temperature.
  • Low on-resistance of 2Ohm at 10V gate drive.
  • Surface-mount DPAK package (TO-252AA) for automated assembly.
  • Wide operating junction temperature range -55°C to 150°C.

FDD5N60NZTM Applications

  • Suitable for high-voltage DC-DC converters and power supplies.
  • Used as primary switch in offline flyback or forward converters.
  • Ideal for power factor correction (PFC) boost stages.
  • Applicable in motor control and lighting ballast circuits.

FDD5N60NZTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD5N60NZTM?

The maximum drain-source voltage is 600V.

What continuous drain current can this MOSFET handle?

It can handle 4A continuous drain current at 25°C case temperature.

What is the maximum on-resistance of the FDD5N60NZTM?

The maximum drain-source on-resistance is 2Ohm at Id=2A and Vgs=10V.

What package does the device come in?

It is available in a DPAK package (TO-252-3, DPak, SC-63) with a supplier device package of TO-252AA.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What is the maximum power dissipation of this MOSFET?

Maximum power dissipation is 83W at case temperature 25°C.

Is this component RoHS compliant?

RoHS status is listed as RoHS3 Compliant from precomputed data (unverified).

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