| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
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The FDD5N50UTM-WS is an N-Channel MOSFET from On Semiconductor designed for high-voltage switching applications. It offers a maximum drain-source voltage of 500V and a continuous drain current of 3A at case temperature. The device features a low on-resistance of 2 Ohm at 10V gate drive, enabling efficient power conversion. With a typical gate charge of 15nC and input capacitance of 650pF, it is suitable for moderate-speed switching circuits.
This MOSFET is optimized for driving with a 10V gate voltage and can handle gate-source voltages up to ±30V. The maximum power dissipation is 40W at case temperature, and it operates over a junction temperature range of -55°C to 150°C, making it suitable for industrial and automotive environments.
The device is housed in a surface mount TO-252 package (also known as DPAK), which offers a compact footprint for automated assembly. It is designed for use in power supplies, motor controls, and other power management circuits.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The device is available in a surface mount TO-252-3 (DPak) package, also known as TO-252AA.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is indicated as RoHS3 compliant, but this is unverified. Confirm with the manufacturer.
The maximum drain current is 3A at case temperature.
The maximum on-resistance is 2 Ohm at 1.5A drain current and 10V gate-source voltage.
The maximum gate charge is 15 nC at 10V gate-source voltage.