DistyParts Icon
FDD5N50TM-WS N-Channel MOSFET with 500V drain-source voltage and 4A continuous drain current. Surface mount package in TO-252AA (DPak).
Mfr Part #:

FDD5N50TM-WS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source voltage and 4A continuous drain current. Surface mount package in TO-252AA (DPak).
✓ Total Stock: 17,350 pcs
$ Price Range: $0.36 - $1.98

FDD5N50TM-WS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
17,350 pcs
On Request
17350 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDD5N50TM-WS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDD5N50TM-WS Description

Short technical summary and product information.

The FDD5N50TM-WS is an N-Channel Power MOSFET from On Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 500V and a continuous drain current of 4A (at Tc). The device utilizes advanced MOSFET technology for efficient switching performance.

 

Key electrical specifications include a maximum on-resistance (Rds(on)) of 1.4 Ohm at Vgs = 10V and Id = 2A, a gate threshold voltage (Vgs(th)) of 5V maximum, and a maximum gate charge (Qg) of 15 nC at Vgs = 10V. The input capacitance (Ciss) is 640 pF maximum at Vds = 25V, and the maximum power dissipation is 40W (at Tc). The gate-source voltage range is ±30V.

 

Housed in a surface-mount TO-252-3 (DPak) package, the device is suitable for automated assembly processes. The operating junction temperature range is -55°C to 150°C. This MOSFET is designed for applications requiring high voltage capability and low on-resistance, such as power supplies, inverters, and motor control circuits.

FDD5N50TM-WS Quick Information

Product Type: MOSFET (Single)
Series: UniFET
Canonical Name: N-Channel MOSFET, 500V, 4A, DPAK (TO-252)
Subcategory: N-Channel

FDD5N50TM-WS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD5N50TM-WS Estimated Pricing

Qty Low High
1+ $1.98 $1.98
10+ $1.23 $1.23
100+ $0.81 $0.81
500+ $0.63 $0.63
1,000+ $0.43 $0.43
2,500+ $0.36 $0.36
10,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD5N50TM-WS Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 4A.
  • Low on-resistance of 1.4 Ohm at 10V gate drive.
  • Surface mount package in TO-252AA (DPak).
  • Maximum power dissipation of 40W.

FDD5N50TM-WS Applications

  • High-voltage switching applications up to 500V.
  • Power management in AC-DC converters.
  • Motor drive circuits requiring 4A current capability.

FDD5N50TM-WS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD5N50TM-WS?

500V.

What is the drain current rating?

4A at Tc.

What is the on-resistance?

1.4 Ohm maximum at Id = 2A, Vgs = 10V.

What is the gate threshold voltage?

5V maximum at Id = 250 µA.

What is the package type?

TO-252-3 (DPak) with surface mount, also known as SC-63.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

Home
Account

Categories