| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,338 pcs
|
8338 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD5N50TM is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and continuous drain current of 4A at case temperature. The device features a maximum on-resistance of 1.4 Ohm at 2A gate drive of 10V.
Electrical characteristics include a gate threshold voltage of 5V at 250µA, maximum gate charge of 15 nC at 10V, and input capacitance of 640 pF at 25V. The device can dissipate up to 40W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, suitable for automated assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The part is commonly used in power supply circuits, motor control, and other high-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 626+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
Surface-mount TO-252-3 (DPak).
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant (unverified).
1.4 Ohm maximum at 2A drain current and 10V gate drive.
15 nC maximum at 10V gate-source voltage.
4A at case temperature.