FDD5N50NZTM N-Channel MOSFET, 500V drain-source voltage, 4A continuous drain current, 1.5 Ohm on-resistance, surface mount DPAK (TO-252AA) package.
Mfr Part #:

FDD5N50NZTM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 500V drain-source voltage, 4A continuous drain current, 1.5 Ohm on-resistance, surface mount DPAK (TO-252AA) package.
✓ Total Stock: 19,654 pcs
$ Price Range: $0.76 - $1.79

FDD5N50NZTM Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDD5N50NZTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD5N50NZTM Description

Short technical summary and product information.

The FDD5N50NZTM is an N-Channel MOSFET from ON Semiconductor, designed for power switching applications. It features a drain-to-source voltage of 500V and a continuous drain current of 4A at case temperature. The device has a maximum on-resistance of 1.5 Ohm at 2A gate drive voltage of 10V.

 

This MOSFET uses MOSFET (Metal Oxide) technology and offers a gate threshold voltage of 5V at 250µA. Total gate charge is 12 nC at 10V, and input capacitance is 440 pF at 25V, making it suitable for moderate frequency switching.

 

The device is housed in a surface mount DPAK package (TO-252-3, DPak, SC-63) with supplier device package TO-252AA. Maximum power dissipation is 62W at case temperature. Operating junction temperature ranges from -55°C to 150°C.

FDD5N50NZTM Quick Information

Product Type: N-Channel MOSFET
Series: UniFET II
Canonical Name: FDD5N50NZTM N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

FDD5N50NZTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD5N50NZTM Estimated Pricing

Qty Low High
1+ $1.79 $1.79
10+ $1.14 $1.14
100+ $0.76 $0.76
2,500+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD5N50NZTM Features

  • N-Channel MOSFET, 500V drain-source voltage.
  • 4A continuous drain current at case temperature.
  • 1.5 Ohm max on-resistance at 10V gate drive.
  • Surface mount DPAK (TO-252AA) package.
  • Gate charge 12 nC, input capacitance 440 pF.

FDD5N50NZTM Applications

  • Power supply switching circuits.
  • DC-DC converter applications.
  • Motor control and load switching.
  • General purpose power management.

FDD5N50NZTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the FDD5N50NZTM?

The FDD5N50NZTM is offered in a surface mount DPAK package: TO-252-3, DPak (2 Leads + Tab), SC-63, with supplier device package TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDD5N50NZTM RoHS compliant?

The component is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

What is the maximum drain-to-source voltage?

The maximum drain-to-source voltage (Vdss) is 500V.

What is the continuous drain current rating?

The continuous drain current (Id) is 4A at case temperature (Tc).

What is the on-resistance of the FDD5N50NZTM?

The maximum on-resistance (Rds(on)) is 1.5 Ohm at Id=2A and Vgs=10V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at Id=250µA.

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