Mfr Part #:

FDD5N50NZFTM

FDD5N50NZFTM is an N-Channel MOSFET from On Semiconductor, rated for 500V drain-source voltage and 3.7A continuous drain current. It comes in a TO-252 (DPAK) surface mount package.

✓ Total Stock: 37,155 pcs

FDD5N50NZFTM Available from 3 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	35,400 pcs On Request	35400 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	1,391 pcs On Request	1391 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	364 pcs On Request	364 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDD5N50NZFTM Description

Short technical summary and product information.

The FDD5N50NZFTM is an N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 3.7A at case temperature (Tc). The device utilizes MOSFET (Metal Oxide) technology and offers a maximum on-resistance (Rds(on)) of 1.75 Ohms at 1.85A and 10V gate drive.

Key electrical characteristics include a maximum gate charge (Qg) of 12 nC at 10V and an input capacitance (Ciss) of 485 pF at 25V drain-source voltage. The gate threshold voltage (Vgs(th)) is 5V at 250µA drain current, and the maximum gate-source voltage is ±25V. The device can dissipate up to 62.5W at case temperature and operates over a junction temperature range of -55°C to 150°C.

The FDD5N50NZFTM is housed in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. It is designed for surface mount assembly and is suitable for various power switching applications.

FDD5N50NZFTM Quick Information

Product Type: MOSFET

Canonical Name: FDD5N50NZFTM N-Channel MOSFET

Subcategory: Single MOSFET

FDD5N50NZFTM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

FDD5N50NZFTM Features

N-Channel MOSFET rated for 500V drain-source.
Continuous drain current of 3.7A at Tc.
Low on-resistance of 1.75 Ohms typical.
Surface mount DPAK (TO-252) package.
Wide operating temperature range -55°C to 150°C.

FDD5N50NZFTM Applications

Used in power supply switching circuits.
Suitable for DC-DC converter designs.
Ideal for motor control applications.
Applicable in lighting ballast systems.

FDD5N50NZFTM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDD5N50NZFTM?

500V.

What is the continuous drain current rating?

3.7A at case temperature.

What is the on-resistance of this MOSFET?

Maximum 1.75 Ohms at 1.85A and 10V gate drive.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package does the FDD5N50NZFTM come in?

TO-252-3 (DPak) surface mount package.

Is the FDD5N50NZFTM RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified.

What is the gate threshold voltage?

Maximum 5V at 250µA drain current.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.7 A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	485 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	62.5 W (Tc)
Rds On (Max) @ Id, Vgs	1.75 Ohm @ 1.85A, 10V
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	5 V @ 250 µA