FDD5810-F085 FDD5810-F085 is a 60V N-Channel MOSFET from On Semiconductor, rated for 7.4A continuous drain current at ambient temperature and 37A at case temperature. Features 22mOhm maximum Rds on at 32A and 10V gate drive. Surface mount DPAK packaging.
Mfr Part #:

FDD5810-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD5810-F085 is a 60V N-Channel MOSFET from On Semiconductor, rated for 7.4A continuous drain current at ambient temperature and 37A at case temperature. Features 22mOhm maximum Rds on at 32A and 10V gate drive. Surface mount DPAK packaging.
✓ Total Stock: 346,790 pcs
$ Price Range: $1.54

FDD5810-F085 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
345,000 pcs
345000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,790 pcs
1790 pcs On Request 1 On Request On Request On Request On Request On Request

FDD5810-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDD5810-F085 Description

Short technical summary and product information.

The FDD5810-F085 by On Semiconductor is a 60V N-Channel Power MOSFET using advanced MOSFET (Metal Oxide) technology. This device is designed for high-efficiency power management applications requiring low on-resistance and fast switching performance.

 

Key electrical characteristics include a drain-to-source voltage of 60V, a continuous drain current rated at 7.4A at ambient temperature and 37A at case temperature, and a maximum drain-source on-resistance of 22mOhm at 32A Id and 10V Vgs. The gate charge is 34nC at 10V, and input capacitance is 1890pF at 25Vds.

 

The device operates over a wide junction temperature range of -55°C to 175°C and can dissipate up to 72W at case temperature. It is surface mounted in a DPAK (TO-252-3, DPak, SC-63) package with gull wing termination, making it suitable for automated assembly processes. The supplier device package is TO-252AA.

FDD5810-F085 Quick Information

Product Type: Power MOSFET
Canonical Name: FDD5810-F085 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDD5810-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD5810-F085 Estimated Pricing

Qty Low High
2,500+ $1.54 $1.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD5810-F085 Features

  • N-Channel MOSFET rated for 60V drain-source.
  • Continuous current of 37A at case temperature.
  • Max Rds on of 22mOhm at 10V gate drive.
  • Wide operating temperature range -55°C to 175°C.
  • Surface mount DPAK package (TO-252AA).

FDD5810-F085 Applications

  • Ideal for DC-DC converter and regulator circuits.
  • Suitable for power management in automotive systems.
  • Used in low-voltage motor control applications.
  • Optimized for high-efficiency switching power supplies.

FDD5810-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss)?

60 V

What is the continuous drain current rating?

7.4 A at ambient temperature (Ta) and 37 A at case temperature (Tc).

What is the maximum on-resistance (Rds on)?

22 mOhm at Id=32A and Vgs=10V

What is the operating temperature range?

-55°C to 175°C (junction temperature)

What package does the FDD5810-F085 come in?

Surface mount TO-252-3, DPak (2 Leads + Tab), SC-63 (supplier device package TO-252AA).

Is the FDD5810-F085 RoHS compliant?

RoHS3 compliant (unverified)

What is the gate charge of this MOSFET?

Maximum 34 nC at Vgs=10V

Home
Account

Categories