| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,716 pcs
|
1716 pcs | On Request | 1 | On Request | On Request | 1726+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD5810 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a 60V drain-source breakdown voltage. The device can handle a continuous drain current of 7.4A at 25°C ambient temperature and up to 37A when the case temperature is maintained at 25°C.
Key electrical characteristics include a maximum drain-source on-resistance of 22 milliohms at a gate-source voltage of 10V and drain current of 32A. The gate threshold voltage is 2V maximum at 250µA drain current. Input capacitance is 1890pF at 25V drain-source bias, and total gate charge is 34nC at 10V gate drive.
The MOSFET is housed in a DPAK (TO-252) surface-mount package with three leads and a tab for heat dissipation. It supports an operating junction temperature range from -55°C to 175°C, making it suitable for demanding thermal environments. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.87 | $0.87 |
| 10+ | $0.54 | $0.54 |
| 50+ | $0.40 | $0.40 |
| 100+ | $0.35 | $0.35 |
| 500+ | $0.27 | $0.27 |
| 2,500+ | $0.21 | $0.21 |
| 7,500+ | $0.18 | $0.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 7.4A at 25°C ambient temperature and 37A at 25°C case temperature.
The maximum drain-source on-resistance is 22 milliohms at a gate-source voltage of 10V and drain current of 32A.
The FDD5810 is available in a DPAK (TO-252-3, DPak (2 Leads + Tab), SC-63) surface-mount package.
The operating junction temperature range is from -55°C to 175°C.
The FDD5810 is listed as RoHS3 compliant, though this information is unverified.