| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,806 pcs
|
21806 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD5690 is an N-Channel MOSFET from ON Semiconductor, built with PowerTrench technology. It features a maximum drain-source voltage of 60V and a continuous drain current of 30A at case temperature. The on-resistance is typically 27mΩ at 9A drain current with a 10V gate drive. Gate charge is 32nC at 10V, and input capacitance is 1110pF at 25V drain-source voltage. The device is designed for efficient power switching and management.
This MOSFET can dissipate up to 3.2W at ambient temperature and 50W at case temperature. It operates over a junction temperature range of -55°C to 150°C. The threshold voltage is 4V maximum at 250µA drain current. The maximum gate-source voltage is ±20V.
The FDD5690 is offered in a surface mount TO-252-3 (DPak) package, suitable for automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include DC-DC converters, power management circuits, and motor control.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.64 | $0.64 |
| 5,000+ | $0.60 | $0.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V maximum.
30A at case temperature (Tc).
27mΩ maximum at 9A drain current and 10V gate-source voltage.
-55°C to 150°C junction temperature.
TO-252-3 (DPak) surface mount.
Yes, RoHS3 compliant (unverified).
32nC maximum at 10V gate-source voltage.