FDD5670 FDD5670 is a 60V, 52A N-Channel Power MOSFET from On Semiconductor with a low 15mΩ on-resistance at 10V gate drive, housed in a surface-mount TO-252AA package.
Mfr Part #:

FDD5670

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD5670 is a 60V, 52A N-Channel Power MOSFET from On Semiconductor with a low 15mΩ on-resistance at 10V gate drive, housed in a surface-mount TO-252AA package.
✓ Total Stock: 2,700 pcs
$ Price Range: $0.84 - $0.85

FDD5670 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
200 pcs
200 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

FDD5670 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD5670 Description

Short technical summary and product information.

The FDD5670 is an N-Channel enhancement-mode Power MOSFET from On Semiconductor designed for high-efficiency power switching applications. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 52A at 25°C case temperature. The device achieves a low maximum on-resistance of 15mΩ at 10V gate drive and 10A drain current, enabling reduced conduction losses.

 

This MOSFET utilizes advanced MOSFET technology and offers a maximum gate charge of 73nC at 10V, with typical input capacitance of 2739pF at 15V drain-source bias. The gate threshold voltage is specified at a maximum of 4V at 250µA drain current. Recommended drive voltages are 6V and 10V to achieve full enhancement with minimal Rds(on). The maximum gate-source voltage rating is ±20V.

 

The device is capable of dissipating up to 83W at the case and 3.8W at ambient temperature. Operating junction temperature range is -55°C to +175°C. The FDD5670 is supplied in a surface-mount TO-252-3 (DPak) package with the supplier device package designation TO-252AA. It is suitable for a wide range of power management and dc-dc converter circuits.

FDD5670 Quick Information

Product Type: Power MOSFET
Canonical Name: FDD5670 N-Channel Power MOSFET, 60V, 52A, 15mΩ
Subcategory: Single N-Channel

FDD5670 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDD5670 Estimated Pricing

Qty Low High
2,500+ $0.85 $0.85
5,000+ $0.84 $0.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD5670 Features

  • N-Channel 60V power MOSFET design.
  • Low 15mΩ maximum on-resistance.
  • 52A continuous drain current capability.
  • Surface-mount TO-252AA (DPak) package.

FDD5670 Applications

  • Ideal for dc-dc converter circuits.
  • Used in power management systems.

FDD5670 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD5670?

The drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The continuous drain current at 25°C ambient is 52A.

What is the Rds(on) of this MOSFET?

The maximum on-resistance is 15mΩ at Vgs=10V and Id=10A.

What is the operating temperature range?

The junction temperature range is -55°C to +175°C.

What package does the device come in?

It is available in a TO-252-3 (DPak) surface-mount package, designated as TO-252AA.

Is the FDD5670 RoHS compliant?

The datasheet indicates RoHS3 compliance, though this is unverified.

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