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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
254,500 pcs
|
254500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,187 pcs
|
2187 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,234 pcs
|
1234 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
585 pcs
|
585 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
161 pcs
|
161 pcs | On Request | 1 | On Request | On Request | 1533+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Source On Resistance (Maximum @ VGS=4.5 V) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Typical/Maximum @ ID = 250 µA) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Tc) | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-Source Avalanche Energy | |
| Standard Package Qty | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Junction-to-Ambient (@ Note 1 A) | |
| Thermal Resistance, Junction-to-Ambient (@ Note 1 b) | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD5614P is a P-Channel PowerTrench MOSFET from onsemi, designed for power management and load switch applications. It is rated for a drain-source voltage of 60V and a continuous drain current of 15A at ambient temperature. The device offers a maximum on-resistance of 100 mOhm at Vgs = -10V and Id = 4.5A, and 130 mOhm at Vgs = -4.5V. Gate threshold voltage ranges from 1V to 3V at Id = 250 uA, with a typical value of 1.6V. Maximum gate charge is 24 nC at Vgs = 10V, and input capacitance is 759 pF at Vds = 30V, enabling fast switching.
The MOSFET is housed in a TO-252-3 (DPak) surface-mount package with a gull-wing lead form. It supports a maximum power dissipation of 42W at case temperature and 3.8W at ambient. Thermal resistance from junction to case is 3.5°C/W, and junction-to-ambient is 40°C/W (note 1a) or 96°C/W (note 1b). The device is rated for operation from -55°C to 175°C junction temperature. The part is Pb-free and supplied in tape and reel packaging with 2500 units per reel.
Typical applications include DC/DC converters, power management circuits, and load switches where high efficiency and compact footprint are required. The PowerTrench technology provides low on-resistance and fast switching performance.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.38 | $0.38 |
| 2,500+ | $0.30 | $0.30 |
| 5,000+ | $0.28 | $0.28 |
| 7,500+ | $0.27 | $0.27 |
| 12,500+ | $0.25 | $0.25 |
| 17,500+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60V.
The FDD5614P is available in a TO-252-3 (DPak) surface-mount package.
The operating junction temperature range is -55°C to 175°C.
The device is marked as RoHS3 compliant and Pb-free, but the RoHS status is unverified. The Pb-free claim is verified via the datasheet.
The maximum on-resistance is 100 mOhm at Vgs = 10V and Id = 4.5A.
The maximum gate charge is 24 nC at Vgs = 10V.