| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDD4N60NZ is a single N-channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications, featuring a maximum drain-source voltage of 600V and a continuous drain current of 3.4A at case temperature. The device is built using metal-oxide semiconductor technology.
Key electrical characteristics include a maximum on-resistance of 2.5Ω at Vgs=10V and Id=1.7A, a total gate charge of 10.8nC at Vgs=10V, and an input capacitance of 510pF at Vds=25V. The maximum threshold voltage is 5V at Id=250µA, and the gate-source voltage can range up to ±25V. The device can dissipate up to 114W at case temperature.
The MOSFET is available in a TO-252-3 (DPak) surface-mount package, also known as TO-252AA, and operates over a junction temperature range of -55°C to 150°C. It is suitable for space-constrained PCB designs due to its surface-mount form factor.
600V.
TO-252-3 (DPak) surface mount, supplier package TO-252AA.
-55°C to 150°C (junction temperature).
Yes, listed as RoHS3 compliant.
2.5Ω at Id=1.7A, Vgs=10V.
10.8nC at Vgs=10V.
3.4A at case temperature.