| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241,067 pcs
|
241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,222 pcs
|
3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,383 pcs
|
1383 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,165 pcs
|
1165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
338 pcs
|
338 pcs | On Request | 1 | On Request | On Request | 1320+ | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD4685 is a P-Channel power MOSFET manufactured by On Semiconductor. It is designed for power management and load switching applications where low on-resistance and efficient switching are required. The device is rated for a maximum drain-to-source voltage of 40 V and can conduct a continuous drain current of 8.4 A at ambient temperature and 32 A at case temperature.
The MOSFET uses metal-oxide semiconductor technology and features a maximum on-resistance of 27 mΩ at a drain current of 8.4 A with a 10 V gate drive. It supports gate drive voltages of 4.5 V and 10 V, making it compatible with both logic-level and standard gate drivers. The maximum gate-source voltage is ±20 V, and the threshold voltage is 3 V or less at 250 µA drain current. Total gate charge is 27 nC at 5 V, and input capacitance is 2380 pF at 20 V drain-source voltage.
The device is housed in a surface-mount TO-252-3 (DPak) package, also designated as SC-63, with a TO-252AA supplier package. Maximum power dissipation is 69 W at case temperature. The operating junction temperature range is -55°C to 150°C. The FDD4685 is well suited for high-side load switching, DC-DC converters, and battery management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.76 | $1.76 |
| 10+ | $1.09 | $1.09 |
| 100+ | $0.72 | $0.72 |
| 500+ | $0.56 | $0.56 |
| 2,500+ | $0.56 | $0.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40 V.
The device comes in a TO-252-3 (DPak) surface-mount package, also designated SC-63, with a TO-252AA supplier device package.
The operating junction temperature range is -55°C to 150°C.
Existing compliance data indicates the device is RoHS3 Compliant.
The maximum continuous drain current is 8.4 A at ambient temperature and 32 A at case temperature.
The maximum Rds(on) is 27 mΩ at a drain current of 8.4 A and gate-source voltage of 10 V.
The maximum gate-source voltage is ±20 V.