| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDD45AN06LA0 is a 60V N-Channel PowerTrench MOSFET from On Semiconductor, designed for automotive and industrial applications. It features a drain-source voltage rating of 60V and continuous drain current of 25A at Tc=25°C with Vgs=10V. The maximum on-resistance is 36mOhm at Vgs=10V, with a typical value of 39mOhm at Vgs=5V. The total gate charge is 11nC maximum at Vgs=5V, enabling efficient switching. The device is avalanche-rated for single-pulse energy of 15mJ. Power dissipation is 55W at Tc=25°C. The operating junction temperature range is -55°C to 175°C. The MOSFET is qualified to AEC Q101 for automotive reliability. It is housed in a surface-mount TO-252AA (DPak) package, suitable for automated assembly. Typical applications include motor control, ABS systems, powertrain management, injection systems, DC-DC converters, and primary switches for 12V/24V systems.
60V.
Surface mount TO-252AA (DPak) package.
-55°C to 175°C (junction temperature).
It is listed as RoHS3 Compliant, but this status is unverified. Please verify with manufacturer.
39mOhm typical at 22A, Vgs=5V.
Yes, it is qualified to AEC Q101 as confirmed in the datasheet.