| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
108 pcs
|
108 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD4243-G is a P-Channel enhancement-mode MOSFET built with ON Semiconductor's PowerTrench technology. It is designed for high-efficiency power management applications. The device offers a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current of 14A when the case temperature (Tc) is maintained. The on-resistance is typically 44mΩ at Vgs = 10V and Id = 6.7A, ensuring low conduction losses. The gate charge is 29nC at Vgs = 10V, and the input capacitance is 1550pF at Vds = 20V, enabling fast switching. The MOSFET is housed in a TO-252-3 (DPak) surface-mount package, which is suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and REACH unaffected.
40V.
14A at case temperature (Tc).
44mΩ at Id=6.7A, Vgs=10V.
-55°C to 150°C (junction).
TO-252-3 (DPak).
Yes, RoHS3 compliant.
Maximum 3V at Id=250µA.