Mfr Part #:

FDD3N50NZTM

N-Channel power MOSFET by On Semiconductor featuring 500V drain-source voltage, 2.5A continuous drain current, and low 2.5 Ohm on-resistance in a surface-mount TO-252 package.

✓ Total Stock: 3,691 pcs

FDD3N50NZTM Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	1,962 pcs On Request	1962 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,149 pcs On Request	1149 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	580 pcs On Request	580 pcs	On Request	1	On Request	On Request	1101+	On Request	On Request

FDD3N50NZTM Description

Short technical summary and product information.

The FDD3N50NZTM is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring up to 500V drain-source voltage and 2.5A continuous drain current. The device features a maximum on-resistance of 2.5 Ohm at 10V gate drive, enabling efficient power conversion.

Key electrical characteristics include a gate threshold voltage of 5V maximum, low gate charge of 8 nC, and input capacitance of 280 pF, which support fast switching and reduced driver losses. The MOSFET can dissipate up to 40W and operates over a junction temperature range of -55°C to 150°C.

The device is housed in a surface-mount TO-252-3 package (DPak, SC-63) with a supplier device package of TO-252AA, suitable for automated assembly. It is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified. This MOSFET is commonly used in power supplies, DC-DC converters, and motor control circuits.

FDD3N50NZTM Quick Information

Product Type: Power MOSFET

Series: UniFET II

Canonical Name: FDD3N50NZTM N-Channel Power MOSFET, 500V, 2.5A, TO-252

Subcategory: Single MOSFETs

FDD3N50NZTM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

FDD3N50NZTM Features

500V drain-source voltage rating.
2.5A continuous drain current.
Low on-resistance of 2.5 Ohm.
Surface-mount TO-252 package.
Operating temperature range -55°C to 150°C.

FDD3N50NZTM Applications

Power supply switching circuits.
DC-DC converter applications.
Motor control and drives.
High voltage load switching.

FDD3N50NZTM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

500V maximum.

What is the continuous drain current?

2.5A at Tc=25°C.

What is the on-resistance?

2.5 Ohm maximum at Id=1.25A and Vgs=10V.

What is the gate threshold voltage?

5V maximum at Id=250µA.

What is the package type?

TO-252-3, DPak (2 Leads + Tab), SC-63 (supplier package TO-252AA).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the component RoHS compliant?

RoHS3 compliant (unverified).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	2.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Industrial Grade	No
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±25 V
Vgs(th) (Max) @ Id	5 V