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FDD3860 N-Channel power MOSFET rated for 100V drain-source voltage and 6.2A continuous drain current. Features low on-resistance of 36mOhm at 10V gate drive and is housed in a surface-mount TO-252 (DPAK) package.
Mfr Part #:

FDD3860

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET rated for 100V drain-source voltage and 6.2A continuous drain current. Features low on-resistance of 36mOhm at 10V gate drive and is housed in a surface-mount TO-252 (DPAK) package.
✓ Total Stock: 237,149 pcs

FDD3860 Available from 5 distributors

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FDD3860 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD3860 Description

Short technical summary and product information.

The FDD3860 is an N-Channel power MOSFET from On Semiconductor designed for general-purpose switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 6.2A at ambient temperature. The on-resistance is typically 36mOhm at 5.9A drain current and 10V gate drive. The gate threshold voltage is 4.5V maximum at 250µA, and the total gate charge is 31nC at 10V.

 

Input capacitance is 1740pF at 50V drain-source voltage. Power dissipation is rated at 3.1W at ambient temperature and 69W at case temperature. The device operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is offered in a surface-mount TO-252-3 (DPak) package (also known as SC-63) with a supplier device package of TO-252AA. It is listed as RoHS3 compliant, REACH unaffected, and MSL level 1 (unlimited).

FDD3860 Quick Information

Product Type: MOSFET
Series: FDD3860
Canonical Name: N-Channel Power MOSFET, 100V, 6.2A, TO-252 (DPAK)
Subcategory: Single MOSFET

FDD3860 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDD3860 Features

  • 100V drain-source voltage rating.
  • 6.2A continuous drain current capability.
  • Low on-resistance of 36 milliohms.
  • Surface mount DPAK package design.
  • N-Channel MOSFET with 10V gate drive.

FDD3860 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Common in battery protection circuits.

FDD3860 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD3860?

100V maximum.

What package options are available for the FDD3860?

TO-252-3, DPak (2 leads + tab), SC-63; supplier device package is TO-252AA.

What is the operating temperature range of the FDD3860?

-55°C to 150°C junction temperature.

Is the FDD3860 RoHS compliant?

Yes, listed as RoHS3 compliant.

What is the maximum drain current of the FDD3860?

6.2A at ambient temperature.

What is the on-resistance of the FDD3860?

36 milliohms maximum at 5.9A drain current and 10V gate-source voltage.

What is the gate threshold voltage?

4.5V maximum at 250µA drain current.

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