| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,000 pcs
|
39000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Quantity | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD3706 is a 20V N-Channel PowerTrench MOSFET designed for high efficiency in DC/DC converters and motor drive applications. It features a drain-source breakdown voltage of 20V and a continuous drain current of 14.7A at ambient temperature (Ta=25°C) and 50A at case temperature (Tc=25°C). The device achieves a low on-resistance of 9mOhm maximum at Vgs=10V and Id=16.2A, with typical values of 7.5mOhm at 10V and 8mOhm at 4.5V. Gate charge is typically 16nC, enabling fast switching. Input capacitance is 1882pF typical at Vds=10V. The MOSFET is housed in a surface-mount TO-252 (DPAK) package with a supplier device package of TO-252AA. It operates over a junction temperature range of -55°C to 175°C. The PowerTrench technology optimizes low gate charge and low RDS(on) for improved system efficiency.
The drain-source breakdown voltage (Vdss) is 20V minimum.
The FDD3706 is available in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package, with supplier device package TO-252AA.
The operating and storage junction temperature range is -55°C to 175°C.
The FDD3706 is listed as RoHS3 compliant, but this status is unverified.
The typical gate charge is 16 nC.
The maximum drain-source on-resistance at Vgs=10V and Id=16.2A is 9 mOhm.
The continuous drain current at Tc=25°C is 50A maximum.