| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,500 pcs
|
27500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,100 pcs
|
8100 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | 1125 | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
462 pcs
|
462 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
106 pcs
|
106 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD3672 is an N-channel MOSFET from On Semiconductor designed for power switching applications. It features a drain-to-source voltage rating of 100V and a continuous drain current of 6.5A at ambient temperature or 44A at case temperature. The device has a maximum on-resistance of 28mΩ at 44A and 10V gate drive, and a maximum gate charge of 36nC.
The MOSFET is housed in a TO-252-3 (DPak) surface mount package with a supplier device package of TO-252AA. It supports a maximum power dissipation of 135W at case temperature and operates over a junction temperature range of -55°C to 175°C. The gate-source voltage maximum is ±20V, and the gate threshold voltage is 4V at 250µA drain current.
This device is suitable for high-current switching in power management, DC-DC converters, and load switching applications. The low on-resistance and moderate gate charge help minimize conduction and switching losses in typical power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.59 | $2.59 |
| 10+ | $1.62 | $1.62 |
| 100+ | $1.14 | $1.14 |
| 2,500+ | $1.14 | $1.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 100V.
The device is available in TO-252-3, DPak (2 Leads + Tab), SC-63 package; supplier device package is TO-252AA.
The operating junction temperature range is -55°C to 175°C.
Listed as RoHS3 Compliant, but this is unverified.
Continuous drain current is 6.5A at ambient temperature and 44A at case temperature.
Maximum on-resistance is 28mΩ at 44A and 10V gate drive.
Maximum gate charge is 36nC at 10V gate-source voltage.