Mfr Part #:

FDD3670

FDD3670 is an N-Channel power MOSFET from On Semiconductor with 100V drain-source voltage and 34A continuous drain current. It features 32mOhm maximum on-resistance at 10V gate drive.

✓ Total Stock: 3,699 pcs

$ Price Range: $0.85 - $2.65

FDD3670 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Components Technology Group, Inc. ✓ Non-Authorised Inventory information	3,600 pcs On Request	3600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	99 pcs On Request	99 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDD3670 Description

Short technical summary and product information.

The FDD3670 is a single N-Channel power MOSFET manufactured by On Semiconductor (onsemi) using MOSFET (Metal Oxide) technology. It is designed for switching applications requiring a drain-to-source voltage rating of 100V and continuous drain current capability of 34A (at Ta). The device offers a maximum on-resistance of 32 mOhm at 7.3A drain current and 10V gate-source voltage.

Gate charge is specified at 80nC (max) at 10V, and input capacitance is 2490pF (max) at 50V drain-source. The gate threshold voltage is 4V (max) at 250µA, with a recommended gate drive voltage range of 6V to 10V. Maximum gate-source voltage is ±20V.

Power dissipation is rated at 3.8W at ambient temperature (Ta) and 83W at case temperature (Tc). The device operates over a junction temperature range of -55°C to 175°C. It is supplied in a surface-mount TO-252-3 (DPak) package (also known as SC-63 or D-Pak).

FDD3670 Quick Information

Product Type: Single N-Channel Power MOSFET

Series: PowerTrench

Canonical Name: FDD3670 N-Channel Power MOSFET

Subcategory: Single N-Channel Power MOSFET

FDD3670 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDD3670 Estimated Pricing

Qty	Low	High
1+	$2.65	$2.65
10+	$1.71	$1.71
100+	$1.17	$1.17
500+	$0.93	$0.93
1,000+	$0.86	$0.86
2,500+	$0.85	$0.85

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD3670 Features

100V drain-source voltage rating.
34A continuous drain current capability.
32mOhm maximum on-resistance Rds(on).
80nC gate charge for efficient switching.
Surface mount D-Pak (TO-252) package.

FDD3670 Applications

Switching power supplies and DC-DC converters.
Motor control and drive circuits.
Load switching and power management.
Battery protection and charging circuits.

FDD3670 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating of the FDD3670?

The FDD3670 has a maximum drain-to-source voltage (Vdss) rating of 100V.

What is the continuous drain current capability?

The continuous drain current (Id) is 34A at ambient temperature (Ta).

What is the operating temperature range of the FDD3670?

The junction operating temperature range is -55°C to 175°C.

What package does the FDD3670 come in?

The FDD3670 is offered in a TO-252-3 (DPak) surface-mount package, also known as SC-63 or D-Pak.

Is the FDD3670 RoHS compliant?

The part is reported as RoHS3 compliant, with low confidence. Verification is recommended.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	34 A (Ta)
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2490 pF @ 50 V
Medical Grade	Yes
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	3.8 W (Ta)
Rds On (Max) @ Id, Vgs	32 mOhm @ 7.3 A, 10 V
SVHC Present	Not Present
Supplier Device Package	TO-252, (D-Pak)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 250 µA