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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,535 pcs
|
2535 pcs | On Request | 1 | On Request | On Request | 1832+ | On Request | On Request | |
|
495 pcs
|
495 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (Continuous) (Maximum @ N-Channel, Tc=25 °C (assumed) | |
| Drain Current (Continuous) (Maximum @ P-Channel, Tc=25 °C (assumed) | |
| Drain to Source On Resistance (Maximum @ Id=-9.4 A, Vgs=-10 V (assumed) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Voltage (Maximum @ N-channel) | |
| Drain-to-Source Voltage (Maximum @ P-channel) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDD3510H from On Semiconductor is a versatile MOSFET device featuring both N-Channel and P-Channel configurations with a common drain. It supports a maximum drain-to-source voltage of 80V for N-Channel and -80V for P-Channel operation.
Key electrical specifications include a continuous drain current of up to 13.9A for the N-Channel and -9.4A for the P-Channel, both at 25°C. The N-Channel configuration offers a low Rds On of 80 mOhm at Id=4.3A and Vgs=10V, while the P-Channel has an Rds On of 190 mOhm under specified conditions. The gate threshold voltage is a maximum of 4V with a gate charge of 18 nC.
This MOSFET is designed with a logic level gate, making it suitable for applications requiring lower gate drive voltages. It has an input capacitance of 800 pF and is housed in a TO-252 (DPAK) surface mount package, facilitating integration into compact electronic designs.
The operating temperature range for the FDD3510H is from -55°C to 150°C, with a power dissipation of 1.3W. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.52 | $0.52 |
| 5,000+ | $0.48 | $0.48 |
| 7,500+ | $0.47 | $0.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain to source voltage for the N-Channel configuration is 80V.
The maximum drain to source voltage for the P-Channel configuration is -80V.
The continuous drain current for the N-Channel configuration is a maximum of 13.9A.
The continuous drain current for the P-Channel configuration is a maximum of -9.4A.
The Rds On for the N-Channel configuration is a maximum of 80 mOhm at Id=4.3A, Vgs=10V.
The Rds On for the P-Channel configuration is a maximum of 190 mOhm.
The operating temperature range is -55°C to 150°C.