FDD306P P-Channel MOSFET, 12V drain-source voltage, 6.7A drain current, surface mount TO-252 package from On Semiconductor.
Mfr Part #:

FDD306P

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET, 12V drain-source voltage, 6.7A drain current, surface mount TO-252 package from On Semiconductor.
✓ Total Stock: 21,000 pcs
$ Price Range: $0.54 - $1.62

FDD306P Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

FDD306P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD306P Description

Short technical summary and product information.

The FDD306P is a P-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-source voltage of 12 V and a continuous drain current of 6.7 A at Ta. The on-resistance (Rds(on)) is specified at 28 mOhm maximum with a gate drive of 4.5 V and 6.7 A drain current. The gate threshold voltage is 1.5 V maximum at 250 µA, and the device supports gate drive voltages of 1.8 V and 4.5 V for optimized Rds(on) performance.

 

The total gate charge is 21 nC at 4.5 V, and the input capacitance is 1290 pF at 6 V drain-source voltage. Maximum power dissipation is 52 W at Ta. The device is housed in a TO-252-3 (DPak, SC-63) surface mount package with a supplier device package of TO-252AA. It operates across a junction temperature range of -55°C to 175°C.

FDD306P Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET, 12V, 6.7A, TO-252
Subcategory: Single P-Channel

FDD306P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD306P Estimated Pricing

Qty Low High
1+ $1.62 $1.62
10+ $1.03 $1.03
100+ $0.68 $0.68
500+ $0.54 $0.54
2,500+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD306P Features

  • P-Channel MOSFET with 12V drain-source voltage.
  • Maximum drain current of 6.7A at Ta.
  • Low on-resistance of 28 mOhm at 4.5V gate drive.
  • Surface mount TO-252 package for compact design.
  • Operating junction temperature range -55°C to 175°C.

FDD306P Applications

  • Used in load switching for low-voltage circuits.
  • Suitable for power management in portable devices.

FDD306P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD306P?

12 V.

What is the package type of the FDD306P?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the FDD306P RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the maximum drain current?

6.7 A at Ta (ambient temperature).

What is the gate threshold voltage?

1.5 V maximum at 250 µA.

What is the maximum on-resistance?

28 mOhm at 6.7 A drain current and 4.5 V gate drive.

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