| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD306P is a P-Channel MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-source voltage of 12 V and a continuous drain current of 6.7 A at Ta. The on-resistance (Rds(on)) is specified at 28 mOhm maximum with a gate drive of 4.5 V and 6.7 A drain current. The gate threshold voltage is 1.5 V maximum at 250 µA, and the device supports gate drive voltages of 1.8 V and 4.5 V for optimized Rds(on) performance.
The total gate charge is 21 nC at 4.5 V, and the input capacitance is 1290 pF at 6 V drain-source voltage. Maximum power dissipation is 52 W at Ta. The device is housed in a TO-252-3 (DPak, SC-63) surface mount package with a supplier device package of TO-252AA. It operates across a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.62 | $1.62 |
| 10+ | $1.03 | $1.03 |
| 100+ | $0.68 | $0.68 |
| 500+ | $0.54 | $0.54 |
| 2,500+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12 V.
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.
-55°C to 175°C (junction temperature).
It is listed as RoHS3 compliant, but this status is unverified.
6.7 A at Ta (ambient temperature).
1.5 V maximum at 250 µA.
28 mOhm at 6.7 A drain current and 4.5 V gate drive.