| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
225,000 pcs
|
225000 pcs | On Request | 1 | On Request | On Request | 1917+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD2572-F085 is an N-Channel power MOSFET from On Semiconductor designed for moderate voltage and current switching applications. It features a maximum drain-to-source voltage of 150V and supports a continuous drain current of 4A at ambient temperature and 29A at case temperature. The device provides a typical on-resistance of 45mOhm and a maximum on-resistance of 54mOhm at a gate drive of 10V and drain current of 9A. Input capacitance is 1770pF maximum, and total gate charge is 34nC maximum, making it suitable for medium-speed switching. The gate threshold voltage is 4V maximum, and the recommended gate drive voltage range is 6V to 10V. The MOSFET is housed in a TO-252-3 (DPak) surface mount package with supplier device package designation TO-252AA and can operate over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 135W at case temperature.
150V.
29A at Tc.
45mOhm typical at Vgs=10V, Id=9A.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package with supplier device package TO-252AA.
-55°C to 175°C (junction).