FDD24AN06LA0-F085 N-Channel MOSFET from On Semiconductor with 60V drain-source voltage and 7.1A continuous drain current at 25°C ambient. Surface mount package TO-252AA.
Mfr Part #:

FDD24AN06LA0-F085

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 60V drain-source voltage and 7.1A continuous drain current at 25°C ambient. Surface mount package TO-252AA.
✓ Total Stock: 5,500 pcs

FDD24AN06LA0-F085 Available from 2 distributors

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✓ Non-Authorised
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
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FDD24AN06LA0-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD24AN06LA0-F085 Description

Short technical summary and product information.

The FDD24AN06LA0-F085 is an N-Channel MOSFET manufactured by ON Semiconductor, designed for power management applications. It features a drain-to-source voltage rating of 60V and a continuous drain current of 7.1A at ambient temperature (Ta=25°C) or 40A at case temperature (Tc=25°C). The device has a low on-resistance of 19 mOhm maximum at 10V gate drive and 40A drain current.

 

The MOSFET is available in a surface-mount TO-252-3 (DPak) package with a supplier device package of TO-252AA, suitable for automated assembly. It operates over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 75W at case temperature. The gate threshold voltage is 2V maximum at 250µA drain current.

 

With a maximum gate charge of 21 nC at 5V, the device is suitable for low-voltage gate drive circuits. Input capacitance is 1850 pF at 25V drain-source. The device is RoHS3 compliant and has an MSL level of 1 (unlimited), though these compliance values are unverified.

FDD24AN06LA0-F085 Quick Information

Product Type: N-Channel MOSFET
Series: FDD
Canonical Name: FDD24AN06LA0-F085
Subcategory: N-Channel MOSFET

FDD24AN06LA0-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDD24AN06LA0-F085 Features

  • N-Channel MOSFET for power management.
  • 60V drain-source voltage rating.
  • Maximum continuous drain current 40A at case temperature.
  • Low on-resistance of 19 mOhm at 10V gate drive.
  • Surface mount TO-252AA package.

FDD24AN06LA0-F085 Applications

  • Ideal for low-voltage power switching applications.
  • Suitable for use in DC-DC converters.
  • Can be used in battery protection circuits.

FDD24AN06LA0-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

Continuous drain current is 7.1A at ambient temperature (Ta=25°C) and 40A at case temperature (Tc=25°C).

What is the package type?

The package is surface mount TO-252-3 (DPak, 2 leads + tab) with supplier device package TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is this device RoHS compliant?

According to available data, it is RoHS3 compliant, but this is unverified.

What is the on-resistance (Rds on) of this MOSFET?

The maximum on-resistance is 19 mOhm at Vgs=10V and Id=40A.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2V at Id=250µA.

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