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FDD20AN06A0 FDD20AN06A0 is an N-Channel power MOSFET from ON Semiconductor with 60V drain-source breakdown voltage and 45A continuous drain current. It features 20mOhm on-resistance and is housed in a surface-mount TO-252AA package.
Mfr Part #:

FDD20AN06A0

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD20AN06A0 is an N-Channel power MOSFET from ON Semiconductor with 60V drain-source breakdown voltage and 45A continuous drain current. It features 20mOhm on-resistance and is housed in a surface-mount TO-252AA package.
✓ Total Stock: 14,083 pcs

FDD20AN06A0 Available from 1 distributor

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14,083 pcs
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14083 pcs On Request 1 On Request On Request 10+ On Request On Request
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FDD20AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDD20AN06A0 Description

Short technical summary and product information.

The FDD20AN06A0 is an N-Channel MOSFET manufactured by ON Semiconductor. This device is designed for power management and switching applications requiring moderate voltage and high current capability.

 

Electrical characteristics include a drain-source breakdown voltage of 60V, continuous drain current of 8A at ambient temperature or 45A at case temperature, and maximum on-resistance of 20mOhm at 45A and 10V gate drive. Typical on-resistance is 17mOhm under the same conditions. The gate threshold voltage is 4V maximum, and the maximum gate charge is 19nC at 10V gate-source voltage. Input capacitance is 950pF at 25V drain-source bias.

 

The device is offered in a surface-mount TO-252-3 (DPak) package, also known as TO-252AA. It supports an operating junction temperature range of -55°C to 175°C and can dissipate up to 90W at case temperature. The MOSFET is RoHS3 compliant and has moisture sensitivity level 1 (unlimited floor life).

FDD20AN06A0 Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDD20AN06A0 N-Channel Power MOSFET 60V, 45A, TO-252AA
Subcategory: N-Channel MOSFET

FDD20AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD20AN06A0 Features

  • N-Channel MOSFET with 60V drain-source breakdown.
  • 45A continuous drain current at case temperature.
  • 20mOhm maximum on-resistance at 10V gate drive.
  • 19nC gate charge for moderate switching speeds.
  • Surface-mount TO-252AA package with 90W dissipation.

FDD20AN06A0 Applications

  • Used in power management and DC-DC converter circuits.
  • Suitable for motor drive and power switching applications.
  • Ideal for load switching and battery protection systems.

FDD20AN06A0 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDD20AN06A0?

The drain-source breakdown voltage is 60V.

What is the on-resistance of this MOSFET at 10V gate drive?

The typical on-resistance is 17mOhm, with a maximum of 20mOhm at 45A and 10V.

What is the operating temperature range of the FDD20AN06A0?

The junction temperature range is -55°C to 175°C.

What package does the FDD20AN06A0 come in?

It comes in a surface-mount TO-252-3 (DPak, SC-63) package, with supplier device package TO-252AA.

Is the FDD20AN06A0 RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified by a document.

What is the gate charge of the FDD20AN06A0?

The maximum gate charge is 19nC at 10V gate-source voltage.

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