FDD18N20LZ FDD18N20LZ is a 200 V, 16 A N-Channel power MOSFET from onsemi in a DPAK-3 (TO-252) package. It features 125 mΩ maximum on-resistance at 10 V VGS and low gate charge.
Mfr Part #:

FDD18N20LZ

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD18N20LZ is a 200 V, 16 A N-Channel power MOSFET from onsemi in a DPAK-3 (TO-252) package. It features 125 mΩ maximum on-resistance at 10 V VGS and low gate charge.
✓ Total Stock: 13,340 pcs
$ Price Range: $1.39 - $3.09

FDD18N20LZ Available from 4 distributors

✓ Authorised
✓ Non-Authorised
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7,329 pcs
7329 pcs On Request 1 On Request On Request 21+ On Request On Request
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5,000 pcs
5000 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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11 pcs
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FDD18N20LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD18N20LZ Description

Short technical summary and product information.

The FDD18N20LZ is an N-Channel power MOSFET from onsemi, part of the UniFET high-voltage MOSFET family. Built on planar stripe and DMOS technology, it is designed for switching power conversion applications. The device is supplied in a surface-mount DPAK-3 (TO-252-3) package.

 

The MOSFET has a drain-to-source voltage rating of 200 V and continuous drain current of 16 A at 25°C case temperature (9.6 A at 100°C). Maximum drain-source on-resistance is 125 mΩ at VGS = 10 V and ID = 8 A, with typical gate charge of 30 nC and typical reverse transfer capacitance of 25 pF. The device can dissipate up to 89 W at 25°C and operates over a junction temperature range of -55°C to 150°C.

 

With low gate charge, improved dv/dt capability, and 100% avalanche testing, the FDD18N20LZ suits switch-mode power supplies, power factor correction, LED TV power stages, and uninterruptible power supplies.

 

The device comes in a TO-252-3 (DPAK) surface-mount package with supplier device package designation TO-252AA. It is Pb-free and RoHS3 compliant.

FDD18N20LZ Quick Information

Product Type: N-Channel Power MOSFET
Series: UniFET
Canonical Name: On Semiconductor FDD18N20LZ N-Channel MOSFET 200V 16A DPAK-3
Subcategory: Single N-Channel MOSFET

FDD18N20LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDD18N20LZ Estimated Pricing

Qty Low High
1+ $3.09 $3.09
10+ $1.96 $1.96
100+ $1.39 $1.39
2,500+ $1.39 $1.39

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD18N20LZ Features

  • 200 V drain-to-source voltage rating.
  • 16 A continuous drain current capability.
  • 125 mΩ maximum on-resistance at 10 V.
  • Low typical gate charge of 30 nC.
  • 100% avalanche tested for robust operation.

FDD18N20LZ Applications

  • Power factor correction (PFC) circuits.
  • LED TV power supply stages.
  • Uninterruptible power supply designs.
  • Consumer appliance power converters.

FDD18N20LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDD18N20LZ?

The drain-to-source voltage rating (VDSS) is 200 V.

What package is the FDD18N20LZ available in?

It is available in a surface-mount TO-252-3 (DPAK) package with supplier device package TO-252AA.

What is the operating temperature range of the FDD18N20LZ?

-55°C to +150°C junction temperature.

Is the FDD18N20LZ RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free, verified from the datasheet.

What is the continuous drain current rating at 25°C?

Continuous drain current is 16 A at Tc=25°C and 9.6 A at Tc=100°C.

What is the drain-source on-resistance at VGS=10V?

Maximum on-resistance is 125 mΩ at VGS=10V and ID=8A.

What is the gate threshold voltage of the FDD18N20LZ?

Maximum gate threshold voltage is 2.5V at ID=250µA.

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