| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,050 pcs
|
5050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,490 pcs
|
2490 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
94 pcs
|
94 pcs | On Request | 1 | On Request | On Request | 938 | On Request | On Request | |
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD16AN08A0 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion and switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 75V and a continuous drain current of 50A at Tc=25°C (9A at Ta=25°C). The device features a maximum on-resistance (Rds(on)) of 16mOhm at Vgs=10V and Id=50A, ensuring low conduction losses. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the total gate charge (Qg) is 47nC at Vgs=10V, enabling efficient gate drive. Input capacitance (Ciss) is 1874pF at Vds=25V.
The device is rated for a maximum power dissipation of 135W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. It is offered in a surface-mount TO-252-3 (DPak) package with supplier device package TO-252AA, suitable for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.80 | $2.80 |
| 10+ | $1.81 | $1.81 |
| 100+ | $1.30 | $1.30 |
| 500+ | $1.06 | $1.06 |
| 1,000+ | $0.98 | $0.98 |
| 2,500+ | $0.93 | $0.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 75V.
The continuous drain current is 50A at Tc=25°C and 9A at Ta=25°C.
The maximum on-resistance (Rds(on)) is 16mOhm at Vgs=10V and Id=50A.
The device is offered in a surface-mount TO-252-3 (DPak) package with supplier device package TO-252AA.
The junction temperature range is -55°C to 175°C.
Yes, the device is listed as RoHS3 Compliant.