| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD1600N10ALZ is an N-Channel MOSFET from ON Semiconductor, designed for power management applications. It features a maximum drain-source voltage of 100V and continuous drain current of 6.8A at Tc. The device has a maximum on-resistance of 160mOhm at 3.4A and 10V gate drive. Gate charge is 3.61nC at 10V, and input capacitance is 225pF at 50V. The MOSFET is housed in a TO-252-3 (DPak) surface mount package with a TO-252AA supplier device package. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 14.9W at Tc. The device is RoHS3 compliant and has MSL level 1. Typical applications include power supplies, DC-DC converters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.65 | $1.65 |
| 10+ | $0.97 | $0.97 |
| 100+ | $0.69 | $0.69 |
| 2,500+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
6.8A at Tc.
160mOhm at 3.4A, 10V.
-55°C to 150°C (junction).
TO-252-3, DPak (2 Leads + Tab), SC-63; supplier package TO-252AA.
Yes, RoHS3 compliant (unverified).
3.61nC at 10V.