FDD13AN06A0 FDD13AN06A0 is a 60V N-Channel Power MOSFET from On Semiconductor. It offers 50A continuous drain current and low on-resistance of 13.5mΩ (max) at 10V gate drive.
Mfr Part #:

FDD13AN06A0

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD13AN06A0 is a 60V N-Channel Power MOSFET from On Semiconductor. It offers 50A continuous drain current and low on-resistance of 13.5mΩ (max) at 10V gate drive.
✓ Total Stock: 5,856 pcs
$ Price Range: $1.02 - $2.82

FDD13AN06A0 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,336 pcs
2336 pcs On Request 1 On Request On Request On Request On Request On Request

FDD13AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD13AN06A0 Description

Short technical summary and product information.

The FDD13AN06A0 is a 60V N-Channel Power MOSFET from On Semiconductor, utilizing POWERTRENCH technology. It is designed for high-efficiency power management applications. The device features a maximum drain-source voltage of 60V and a continuous drain current of 50A at case temperature 25°C (9.9A at ambient 25°C). The on-resistance is typically 11.5mΩ and maximum 13.5mΩ at VGS=10V and ID=50A. The total gate charge is 22nC typical, enabling low switching losses. The single pulse avalanche energy rating is 56mJ.

 

The device is suitable for applications such as consumer appliances, LED TV, synchronous rectification, battery protection circuits, motor drives, and uninterruptible power supplies. It is packaged in a surface mount DPAK (TO-252) package, which offers good thermal performance with a junction-to-case thermal resistance of 1.3°C/W. The operating junction temperature range is -55°C to 175°C. The FDD13AN06A0 is RoHS compliant, Pb-free, and halide-free.

FDD13AN06A0 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDD13AN06A0 - On Semiconductor N-Channel Power MOSFET, 60V, 50A, DPAK
Subcategory: N-Channel MOSFET

FDD13AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDD13AN06A0 Estimated Pricing

Qty Low High
1+ $2.82 $2.82
10+ $1.82 $1.82
100+ $1.25 $1.25
500+ $1.02 $1.02
2,500+ $1.02 $1.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD13AN06A0 Features

  • 60V drain-source voltage with 50A continuous drain current.
  • Low on-resistance of 13.5mΩ maximum at 10V gate drive.
  • Low total gate charge of 22nC typical for efficient switching.
  • Single pulse avalanche energy rated at 56mJ.
  • RoHS compliant and halide-free construction.

FDD13AN06A0 Applications

  • Used in consumer appliance power management circuits.
  • Ideal for synchronous rectification in power supplies.
  • Suitable for battery protection circuits.
  • Applied in motor drives and uninterruptible power supplies.

FDD13AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDD13AN06A0?

The maximum drain-source voltage (VDSS) is 60V.

What package is the FDD13AN06A0 available in?

It is available in a surface mount DPAK (TO-252) package.

What is the operating temperature range of the FDD13AN06A0?

The junction operating temperature range is -55°C to 175°C.

Is the FDD13AN06A0 RoHS compliant?

Yes, the device is RoHS compliant, Pb-free, and halide-free.

What is the on-resistance of the FDD13AN06A0?

The maximum on-resistance is 13.5mΩ at VGS=10V, ID=50A, with a typical value of 11.5mΩ.

What is the maximum continuous drain current of the FDD13AN06A0?

The maximum continuous drain current is 50A at case temperature 25°C, and 9.9A at ambient temperature 25°C.

What is the total gate charge of the FDD13AN06A0?

The total gate charge (QG) is 22nC typical, 29nC maximum at VGS=10V.

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