Mfr Part #:

FDD10N20LZTM

N-Channel MOSFET from On Semiconductor with 200V drain-source voltage and 7.6A drain current. Features 360mOhm on-resistance at 10V gate drive.

✓ Total Stock: 226,020 pcs

FDD10N20LZTM Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Romaks Technologies ✓ Non-Authorised Inventory information	226,000 pcs On Request	226000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	20 pcs On Request	20 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDD10N20LZTM Description

Short technical summary and product information.

The FDD10N20LZTM is an N-Channel Power MOSFET from On Semiconductor, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 7.6A at case temperature. The device achieves a low on-resistance of 360mOhm at 10V gate drive, with a gate threshold voltage of 2.5V at 250µA. Gate charge is 16nC and input capacitance is 585pF, enabling fast switching performance.

The MOSFET operates over a junction temperature range of -55°C to 150°C and can dissipate up to 83W at case temperature. It is housed in a surface-mount DPAK package (TO-252-3, DPak, SC-63), with supplier device package TO-252AA. The device is rated for gate-source voltages up to ±20V and supports drive voltages of 5V and 10V for optimized on-resistance.

Compliance data indicates RoHS3 compliance, REACH unaffected status, and MSL Level 1 (unlimited). These compliance statements are based on database records and have not been independently verified. The part is available in tape and reel packaging from distributors.

FDD10N20LZTM Quick Information

Product Type: MOSFET

Series: UniFET

Canonical Name: N-Channel MOSFET, 200V, 7.6A, DPAK

Subcategory: N-Channel MOSFET

FDD10N20LZTM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 - Unlimited

REACH Status: REACH Unaffected

FDD10N20LZTM Features

N-Channel MOSFET with 200V drain-source voltage.
Maximum drain current of 7.6A at case temperature.
Low on-resistance of 360 milliohms at 10V gate drive.
Surface mount DPAK-3 package for easy assembly.
Operating temperature range from -55°C to 150°C.

FDD10N20LZTM Applications

Used in DC-DC converter power stages.
Ideal for load switching in power management.
Suitable for motor drive and control circuits.

FDD10N20LZTM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage (Vdss)?

200V

What is the maximum continuous drain current?

7.6A at case temperature (Tc)

What is the on-resistance (Rds(on))?

360mOhm maximum at 3.8A drain current and 10V gate voltage

What is the operating temperature range?

-55°C to 150°C (junction temperature)

What is the package type?

Surface mount DPAK (TO-252-3, DPak, SC-63) with supplier device package TO-252AA

Is the device RoHS compliant?

RoHS3 compliant (unverified from database)

What is the gate charge?

16nC maximum at 10V gate-source voltage

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	7.6 A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	585 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	83W (Tc)
Rds On (Max) @ Id, Vgs	360 mOhm @ 3.8A, 10V
Supplier Device Package	TO-252AA
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA