FDD10AN06A0 FDD10AN06A0 is a N-Channel power MOSFET with 60V drain-source voltage and 11A/50A continuous drain current in a TO-252AA package. It features low on-resistance of 10.5 mOhm at 10V.
Mfr Part #:

FDD10AN06A0

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDD10AN06A0 is a N-Channel power MOSFET with 60V drain-source voltage and 11A/50A continuous drain current in a TO-252AA package. It features low on-resistance of 10.5 mOhm at 10V.
✓ Total Stock: 24,795 pcs
$ Price Range: $1.34 - $3.00

FDD10AN06A0 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,275 pcs
16275 pcs On Request 1 On Request On Request 21+13+ On Request On Request
Non-Authorised Inventory information
6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 1124 On Request On Request

FDD10AN06A0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDD10AN06A0 Description

Short technical summary and product information.

The FDD10AN06A0 is an N-Channel power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications. The device features a maximum drain-source voltage of 60V and can handle continuous drain currents of 11A at ambient temperature (Ta=25°C) and 50A at case temperature (Tc=25°C). The on-resistance is typically 10.5 mOhm at a gate-source voltage of 10V and drain current of 50A, ensuring low conduction losses. The total gate charge is 37 nC, and the input capacitance is 1840 pF at 25V drain-source voltage, which supports moderate switching speeds.

 

The MOSFET is housed in a surface-mount TO-252-3 package, also known as DPak or SC-63, with a supplier device package of TO-252AA. The operating junction temperature range is -55°C to 175°C, and the maximum power dissipation is 135W at case temperature 25°C. The recommended gate drive voltage is 6V to 10V for optimal performance. This component is suitable for use in DC-DC converters, power supplies, and motor control circuits where efficient switching and low resistance are required.

FDD10AN06A0 Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET 60V 11A/50A TO-252AA
Subcategory: Single FETs, MOSFETs

FDD10AN06A0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDD10AN06A0 Estimated Pricing

Qty Low High
1+ $3.00 $3.00
10+ $1.95 $1.95
100+ $1.34 $1.34
2,500+ $1.34 $1.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDD10AN06A0 Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current up to 11A/50A.
  • Low on-resistance of 10.5 mOhm typical.
  • Surface mount TO-252AA package.
  • Operating temperature range -55°C to 175°C.

FDD10AN06A0 Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor control applications.
  • Suitable for power supply switching.
  • Applied in high-frequency switching regulators.

FDD10AN06A0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60 V.

What package is the FDD10AN06A0 available in?

TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package TO-252AA.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDD10AN06A0 RoHS compliant?

RoHS3 Compliant.

What is the continuous drain current rating?

11 A at Ta=25°C, 50 A at Tc=25°C.

What is the typical on-resistance?

10.5 mOhm at 50 A, 10 V.

What is the total gate charge?

37 nC at 10 V.

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