| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,670 pcs
|
9670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD050N03B is an N-channel power MOSFET manufactured by ON Semiconductor, built using metal-oxide semiconductor (MOSFET) technology. It is designed for applications requiring drain-source voltages up to 30V and continuous drain currents up to 50A at case temperature (Tc).
The device features a maximum drain-to-source on-resistance (Rds(on)) of 5 mOhm, measured at a drain current of 25A and 10V gate-to-source voltage. It supports gate drive voltages from 4.5V to 10V, with a maximum gate threshold voltage of 3V at 250uA drain current. The total gate charge is limited to 43 nC at 10V, and input capacitance is 2875 pF at a drain-source voltage of 15V. Power dissipation is rated up to 65W, and the junction temperature range is -55°C to 175°C.
The transistor is supplied in a TO-252-3 package (also known as DPAK or SC-63), with a supplier device package designation of TO-252AA. It is intended for surface-mount installation, enabling compact PCB layout and automated manufacturing.
With its low on-resistance, high current capacity, and standard DPAK footprint, the FDD050N03B is suitable for power switching, load switching, and DC-DC conversion circuits operating from a 30V rail. The device is a single N-channel MOSFET, appropriate for a wide range of mid-power switching applications.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The device is available in TO-252-3 (DPAK, SC-63) with a supplier device package of TO-252AA.
The junction temperature range is -55°C to 175°C.
The product database lists it as RoHS3 Compliant.
The maximum continuous drain current is 50A at 25°C case temperature (Tc).
The maximum Rds(on) is 5mOhm at a drain current of 25A and gate-to-source voltage of 10V.
The total gate charge (Qg) is a maximum of 43nC at a gate-to-source voltage of 10V.