FDC8884 FDC8884 is a 30V N-Channel MOSFET from ON Semiconductor. It features a maximum drain current of 6.5A (Ta) and 8A (Tc) with a low on-resistance of 23mOhm at 10V.
Mfr Part #:

FDC8884

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDC8884 is a 30V N-Channel MOSFET from ON Semiconductor. It features a maximum drain current of 6.5A (Ta) and 8A (Tc) with a low on-resistance of 23mOhm at 10V.
Total Stock: 56,626 pcs
$ Price Range: $0.14

FDC8884 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
55,290 pcs
55290 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,336 pcs
1336 pcs On Request 1 On Request On Request On Request On Request On Request

FDC8884 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain Current (Maximum @ Tc)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC8884 Description

Short technical summary and product information.

The FDC8884 is an N-Channel MOSFET from ON Semiconductor, designed for low-voltage switching applications. It offers a maximum drain-source voltage of 30V and can handle continuous drain currents of 6.5A at ambient temperature and 8A at case temperature. The device features a low on-resistance of 23 milliohms when driven at 10V, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum, a gate charge of 7.4 nC at 10V, and an input capacitance of 465 pF. The MOSFET operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding environments.

 

The FDC8884 is housed in a compact surface-mount package: SOT-23-6 Thin, also known as TSOT-23-6, and is supplied in the SuperSOT-6 format. This package enables space-efficient PCB designs. The part is available in tape and reel, cut tape, and DigiReel options for flexible assembly.

FDC8884 Quick Information

Product Type: MOSFET
Series: FDC8884
Canonical Name: N-Channel MOSFET, 30V, 6.5A/8A, SOT-23-6 Thin/TSOT-23-6, SuperSOT-6
Subcategory: N-Channel MOSFET

FDC8884 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

FDC8884 Estimated Pricing

Qty Low High
6,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC8884 Features

  • N-Channel MOSFET with 30V breakdown voltage.
  • Low on-resistance of 23 milliohms.
  • Supports 6.5A drain current at ambient.
  • Eight ampere drain current at case temperature.
  • Surface mount SuperSOT-6 package.

FDC8884 Applications

  • Power management in portable devices.
  • Load switching for DC-DC converters.
  • Battery protection circuits.
  • Low voltage motor control.
  • General purpose switching applications.

FDC8884 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC8884?

30V.

What package is the FDC8884 available in?

SOT-23-6 Thin, TSOT-23-6, and SuperSOT-6.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDC8884 RoHS compliant?

It is listed as RoHS3 compliant, but this is unverified.

What is the gate charge of the FDC8884?

7.4 nC at 10V.

What is the on-resistance?

23 mOhm at 6.5A and 10V.

What is the maximum drain current?

6.5A at ambient temperature, 8A at case temperature.

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