| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
59,000 pcs
|
59000 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
4,737 pcs
|
4737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,722 pcs
|
2722 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDC86244 is an N-Channel MOSFET from onsemi, built with Shielded Gate technology for improved on-resistance and switching performance. It is rated for a drain-to-source voltage of 150 V and continuous drain current of 2.3 A at 25°C ambient.
The device supports a maximum gate-to-source voltage of ±20 V and can handle pulsed drain currents up to 10 A. It offers a single-pulse avalanche energy rating of 12 mJ, and maximum on-resistance of 144 mΩ at VGS = 10 V and 188 mΩ at VGS = 6 V. The MOSFET is 100% UIL tested and features fast switching speed.
Typical applications include load switches, synchronous rectifiers, and primary switches. The FDC86244 is supplied in a SuperSOT-6 surface-mount package (TSOT23-6), and is Pb-free, Halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.54 | $1.54 |
| 10+ | $0.97 | $0.97 |
| 100+ | $0.64 | $0.64 |
| 500+ | $0.50 | $0.50 |
| 3,000+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150 V.
±20 V.
2.3 A at ambient temperature.
10 A.
12 mJ.
N-Channel MOSFET (Metal Oxide).