FDC8602 The FDC8602 is a dual N-channel Shielded Gate MOSFET from On Semiconductor, rated for 100V drain-source voltage and 1.2A continuous drain current. It features a low on-resistance of 350mΩ at 10V and is packaged in a compact TSOT-23-6 package.
Mfr Part #:

FDC8602

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC8602 is a dual N-channel Shielded Gate MOSFET from On Semiconductor, rated for 100V drain-source voltage and 1.2A continuous drain current. It features a low on-resistance of 350mΩ at 10V and is packaged in a compact TSOT-23-6 package.
✓ Total Stock: 464,192 pcs
$ Price Range: $0.74 - $2.33

FDC8602 Available from 4 distributors

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452,000 pcs
452000 pcs On Request 1 On Request On Request On Request On Request On Request
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9,458 pcs
9458 pcs On Request 1 On Request On Request 1827+ On Request On Request
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1,899 pcs
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835 pcs
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FDC8602 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDC8602 Description

Short technical summary and product information.

The FDC8602 from On Semiconductor is a dual N-channel MOSFET utilizing Shielded Gate technology to achieve low on-resistance and fast switching. It is rated for a maximum drain-source voltage of 100V and a continuous drain current of 1.2A, with pulsed current capability up to 5A. The on-resistance is typically 285mΩ and maximum 350mΩ at VGS=10V, ID=1.2A, and 575mΩ maximum at VGS=6V, ID=0.9A. The gate threshold voltage ranges from 2V to 4V. The device features low gate charge of 2nC and input capacitance of 70pF, enabling efficient high-frequency switching. Power dissipation is 0.96W or 0.69W depending on mounting conditions, with a junction-to-ambient thermal resistance of 130°C/W. The operating junction temperature range is -55°C to 150°C. The MOSFET is 100% UIL tested for avalanche ruggedness, with a single pulse avalanche energy rating of 1.5mJ. The device is housed in a compact TSOT-23-6 surface mount package, also known as SuperSOT-6, and is supplied in tape and reel with 3000 pieces per reel. It is Pb-free, Halide free, and designed to be RoHS compliant. Typical applications include load switching and synchronous rectification.

FDC8602 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: Dual N-Channel MOSFET, 100V, 1.2A, TSOT-23-6
Subcategory: MOSFETs - Arrays

FDC8602 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC8602 Estimated Pricing

Qty Low High
1+ $2.33 $2.33
10+ $1.50 $1.50
100+ $1.02 $1.02
500+ $0.81 $0.81
1,000+ $0.74 $0.74
3,000+ $0.74 $0.74

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC8602 Features

  • Dual N-channel shielded gate MOSFET.
  • Rated for 100V drain-source voltage.
  • Maximum continuous drain current 1.2A.
  • Low on-resistance: 350mΩ at 10V.
  • Compact TSOT-23-6 surface mount package.

FDC8602 Applications

  • Used as a load switch in power circuits.
  • Ideal for synchronous rectifier designs.

FDC8602 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC8602?

100V.

What is the operating temperature range of the FDC8602?

-55°C to 150°C junction temperature.

What package is the FDC8602 available in?

TSOT-23-6 (SuperSOT-6) surface mount package.

Is the FDC8602 RoHS compliant?

Yes, according to the datasheet, the FDC8602 is RoHS compliant, Pb-free, and Halide free.

What is the typical on-resistance of the FDC8602?

285mΩ typical, 350mΩ maximum at VGS=10V, ID=1.2A.

What is the gate charge of the FDC8602?

2nC maximum at VGS=10V.

What is the avalanche energy rating of the FDC8602?

1.5mJ single pulse.

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