Mfr Part #:

FDC8601

N-Channel Shielded Gate MOSFET from On Semiconductor, rated for 100V drain-source voltage and 2.7A continuous current. Features low on-resistance of 109mΩ and compact SuperSOT-6 surface mount package.

✓ Total Stock: 87,000 pcs

$ Price Range: $0.83 - $2.38

FDC8601 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	87,000 pcs On Request	87000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDC8601 Description

Short technical summary and product information.

This N-Channel MOSFET is produced using onsemi's advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for RDS(on), switching performance and ruggedness.

Key electrical specifications: drain-source voltage 100V, continuous drain current 2.7A (12A pulsed), maximum RDS(on) 109mΩ at VGS=10V and ID=2.7A, and 176mΩ at VGS=6V and ID=2.1A. Gate threshold voltage ranges from 2.0V to 4.0V. Low gate charge of 5nC and input capacitance of 210pF enable fast switching. The device is avalanche rated at 13mJ single pulse.

Packaged in a SuperSOT-6 (TSOT-23-6 thin) surface mount package, it is supplied in tape and reel (3000 pcs). The MOSFET is Pb-Free, Halide Free, and RoHS compliant. Operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 1.6W (Note 1a) or 0.8W (Note 1b). Thermal resistance junction-to-ambient is 78°C/W (Note 1a).

Typical applications include load switch, synchronous rectifier, and primary switch in power conversion circuits. The device is 100% UIL tested for ruggedness.

FDC8601 Quick Information

Product Type: MOSFET

Series: FDC8601

Canonical Name: N-Channel Shielded Gate MOSFET, 100V, 2.7A, SuperSOT-6

Subcategory: N-Channel MOSFET

FDC8601 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDC8601 Estimated Pricing

Qty	Low	High
1+	$2.38	$2.38
10+	$1.51	$1.51
100+	$1.01	$1.01
500+	$0.83	$0.83
3,000+	$0.83	$0.83

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC8601 Features

Shielded Gate MOSFET technology for low RDS(on).
Max RDS(on) of 109mΩ at 10V gate drive.
Rated for 100V drain-source voltage.
Continuous drain current of 2.7A.
Avalanche energy rated at 13mJ.

FDC8601 Applications

Load switch applications.
Synchronous rectifier circuits.
Primary switch in power supplies.
General purpose switching.

FDC8601 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDC8601?

100V.

What is the package type for the FDC8601?

SuperSOT-6 (TSOT-23-6 thin), surface mount.

What is the operating temperature range?

-55°C to 150°C.

Is the FDC8601 RoHS compliant?

Yes, RoHS3 Compliant, Pb-Free and Halide Free.

What is the on-resistance of the FDC8601?

Typical 86mΩ, maximum 109mΩ at VGS=10V, ID=2.7A; maximum 176mΩ at VGS=6V, ID=2.1A.

What is the gate charge of the FDC8601?

Maximum 5nC at VGS=10V.

What is the avalanche energy rating?

13mJ single pulse.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	2.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Halogen Free	No
Input Capacitance (Ciss) (Max) @ Vds	210 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	109mOhm @ 2.7A, 10V
SVHC Present	Not Present
Supplier Device Package	SuperSOT-6
Tape & Reel	Yes
Technology	Shielded Gate MOSFET
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4V @ 250µA