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FDC855N N-Channel Logic Level MOSFET rated for 30V drain-source voltage and 6.1A continuous drain current. Features low on-resistance of 27mΩ at 10V and is housed in a compact SuperSOT-6 package.
Mfr Part #:

FDC855N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Logic Level MOSFET rated for 30V drain-source voltage and 6.1A continuous drain current. Features low on-resistance of 27mΩ at 10V and is housed in a compact SuperSOT-6 package.
✓ Total Stock: 5,025 pcs
$ Price Range: $0.35

FDC855N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
25 pcs
On Request
25 pcs On Request 1 On Request On Request NO DC On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC855N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC855N Description

Short technical summary and product information.

The FDC855N is an N-Channel Logic Level MOSFET from ON Semiconductor, designed for low voltage and battery powered applications. It utilizes the advanced POWERTRENCH process to achieve minimized on-state resistance, optimizing power consumption in systems where in-line power loss is critical.

 

Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 6.1A at 25°C, and pulsed drain current up to 20A. The maximum on-resistance is 27mΩ at VGS=10V and ID=6.1A, and 36mΩ at VGS=4.5V and ID=5.3A. The gate threshold voltage ranges from 1.0V to 3.0V, allowing logic-level drive. Total gate charge is 13nC at 10V, and input capacitance is 655pF at Vds=15V.

 

The device is suitable for power management in notebooks and hard disk drives, where efficient switching and low power dissipation are required. It offers a power dissipation of 1.6W (steady state, note 1a) and operates over a junction temperature range of -55°C to +150°C.

 

The FDC855N is packaged in a SuperSOT-6 (TSOT-23-6 thin) surface mount package, which is 72% smaller than a standard SO-8 with a low profile of 1mm. The device is Pb-Free and RoHS compliant.

FDC855N Quick Information

Product Type: N-Channel MOSFET
Series: POWERTRENCH
Canonical Name: FDC855N - N-Channel Logic Level MOSFET, 30V, 6.1A, SuperSOT-6
Subcategory: Logic Level MOSFET

FDC855N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC855N Estimated Pricing

Qty Low High
861+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC855N Features

  • N-Channel logic level MOSFET with 30V rating.
  • Low on-resistance: 27mΩ at 10V, 36mΩ at 4.5V.
  • Continuous drain current of 6.1A at 25°C.
  • SuperSOT-6 package: 72% smaller than SO-8.
  • RoHS compliant and Pb-Free.

FDC855N Applications

  • Power management in notebook computers.
  • Used in hard disk drive power circuits.
  • Ideal for battery-powered portable devices.
  • Suitable for low-voltage DC-DC converters.

FDC855N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC855N?

30V.

What package is the FDC855N available in?

SuperSOT-6 (TSOT-23-6 thin) surface mount package.

What is the operating temperature range of the FDC855N?

-55°C to +150°C junction temperature.

Is the FDC855N RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the gate threshold voltage range?

1.0V (min) to 3.0V (max) at Id=250µA.

What is the maximum on-resistance at VGS=4.5V?

36mΩ at ID=5.3A.

What is the maximum power dissipation?

1.6W (steady state, Note 1a).

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