FDC697P_F077 P-Channel MOSFET from On Semiconductor with 20V drain-source voltage and 8A continuous drain current. Features low on-resistance of 20mΩ at 4.5V gate drive.
Mfr Part #:

FDC697P_F077

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor with 20V drain-source voltage and 8A continuous drain current. Features low on-resistance of 20mΩ at 4.5V gate drive.
✓ Total Stock: 485 pcs

FDC697P_F077 Available from 1 distributor

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485 pcs
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FDC697P_F077 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Tape Width
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC697P_F077 Description

Short technical summary and product information.

The FDC697P_F077 is a P-Channel MOSFET from On Semiconductor, utilizing Fairchild's advanced PowerTrench process for low voltage operation. It is designed for battery power management applications, providing efficient switching with a drain-source voltage rating of 20V and continuous drain current of 8A. The device offers low on-resistance values: 20mΩ at VGS = -4.5V, 25mΩ at VGS = -2.5V, and 35mΩ at VGS = -1.8V, enabling operation at low gate voltages. Fast switching is supported with typical turn-on delay of 18ns and rise time of 6ns. The MOSFET is housed in a surface mount SuperSOT-6 FLMP package, which provides enhanced thermal performance with a junction-to-ambient thermal resistance of 60°C/W (Note 1a). It operates over a junction temperature range of -55°C to +150°C, making it suitable for demanding environments. The part is supplied on 7-inch reels with 8mm tape width, standard quantity 3000 units.

FDC697P_F077 Quick Information

Product Type: MOSFET
Canonical Name: FDC697P_F077 P-Channel MOSFET
Subcategory: Single MOSFET

FDC697P_F077 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDC697P_F077 Features

  • P-Channel MOSFET for battery power management.
  • Low 20mΩ on-resistance at 4.5V gate drive.
  • Operates with 1.8V gate drive for low voltage applications.
  • Fast switching with typical turn-on delay 18ns.
  • Surface mount SuperSOT-6 FLMP package.

FDC697P_F077 Applications

  • Battery management and protection circuits.
  • Load switching applications in portable devices.
  • Power management in DC-DC converter circuits.
  • Battery protection in handheld electronics.

FDC697P_F077 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC697P_F077?

The maximum drain-source voltage (Vdss) is 20V.

What is the package type for this MOSFET?

It comes in a 6-SSOT Flat-lead, SuperSOT-6 FLMP surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to +150°C.

Is the FDC697P_F077 RoHS compliant?

RoHS status is listed as compliant but unverified; treat as low confidence.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 20mΩ at VGS = -4.5V and ID = -8A.

What is the typical gate charge of this MOSFET?

Typical gate charge (Qg) is 39nC at VGS = -4.5V, with a maximum of 55nC.

What are the switching times for the FDC697P_F077?

Typical turn-on delay is 18ns, rise time 6ns, turn-off delay 119ns, fall time 43ns under specified test conditions.

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