DistyParts Icon
FDC658P FDC658P is a P-Channel logic-level MOSFET with -30V drain-source breakdown, -4A continuous drain current, and 50mΩ on-resistance at VGS=-10V. It is housed in a space-saving SuperSOT-6 package and is Pb-Free.
Mfr Part #:

FDC658P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDC658P is a P-Channel logic-level MOSFET with -30V drain-source breakdown, -4A continuous drain current, and 50mΩ on-resistance at VGS=-10V. It is housed in a space-saving SuperSOT-6 package and is Pb-Free.
✓ Total Stock: 11,717 pcs
$ Price Range: $0.42 - $1.30

FDC658P Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
4,574 pcs
On Request
4574 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,020 pcs
On Request
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Hybrid Electronics ✓
Non-Authorised Inventory information
2,760 pcs
On Request
2760 pcs On Request 1 On Request On Request 739 On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
363 pcs
On Request
363 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC658P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDC658P Description

Short technical summary and product information.

FDC658P is a single P-Channel logic-level MOSFET from On Semiconductor, built with the advanced POWERTRENCH process to minimize on-state resistance while maintaining low gate charge. It is designed for efficient load switching, power management, battery charging, and DC/DC conversion in portable and notebook systems.

 

The device features a drain-source breakdown voltage of -30 V and is rated for -4 A continuous drain current at 25°C ambient, with -20 A pulsed current capability. Maximum on-resistance is 50 mΩ at VGS = -10 V and 75 mΩ typical at VGS = -4.5 V, making it suitable for logic-level gate drives. Gate charge is 8 nC typical, supporting fast switching transitions.

 

Packaged in the compact SuperSOT-6 (SOT-23-6 Thin / TSOT-23-6) surface-mount package, the FDC658P saves board space with a low 1 mm profile. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.6 W at 25°C ambient, and the device is Pb-Free.

FDC658P Quick Information

Product Type: Single P-Channel MOSFET
Canonical Name: P-Channel Logic Level MOSFET
Subcategory: Single MOSFETs

FDC658P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC658P Estimated Pricing

Qty Low High
1+ $1.30 $1.30
10+ $0.82 $0.82
100+ $0.54 $0.54
500+ $0.42 $0.42
3,000+ $0.42 $0.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC658P Features

  • P-Channel logic-level MOSFET for low-voltage switching.
  • Rated 4A continuous and -30V drain-source.
  • Low on-resistance: 50mΩ at -10V gate drive.
  • Low gate charge: 8nC typical for fast switching.
  • SuperSOT-6 package with 1mm low profile.

FDC658P Applications

  • Ideal for notebook load switching applications.
  • Use in battery charging circuits.
  • Suitable for DC/DC converter power stages.
  • Handles power management in portable devices.

FDC658P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC658P?

The drain-source breakdown voltage is -30 V minimum.

What is the maximum continuous drain current?

The continuous drain current is -4 A at 25°C ambient, with -20 A pulsed current capability.

What is the on-resistance of the FDC658P?

Maximum RDS(ON) is 50 mΩ at VGS = -10 V and ID = 4 A; typical is 75 mΩ at VGS = -4.5 V.

What is the gate charge of this MOSFET?

Gate charge is 8 nC typical; maximum is 12 nC at VGS = 5 V.

What package is the FDC658P available in?

The device comes in a SuperSOT-6 surface-mount package, also specified as SOT-23-6 Thin / TSOT-23-6.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FDC658P RoHS compliant?

The part is listed as RoHS3 Compliant, but this is unverified. The datasheet confirms the device is Pb-Free.

Home
Account

Categories