| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
915 pcs
|
915 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
224 pcs
|
224 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDC658AP is a single P-Channel Logic Level MOSFET manufactured by onsemi using advanced POWERTRENCH technology. It is designed for battery power management applications, offering a drain-source voltage rating of 30V and a continuous drain current of 4A at ambient temperature. The device achieves a maximum on-resistance of 50mOhm at a gate-source voltage of 10V and 4A drain current, and 75mOhm at 4.5V and 3.4A, making it suitable for low-voltage switching.
This MOSFET features a low gate charge of 8.1nC at 5V gate drive and an input capacitance of 470pF at 15V drain-source voltage, enabling efficient switching in DC-DC converters and load switch applications. The device is rated for power dissipation up to 1.6W at ambient temperature and operates over a junction temperature range of -55°C to 150°C.
Packaged in a compact SuperSOT-6 (SOT-23-6 Thin, TSOT-23-6) surface-mount package, the FDC658AP is Pb-Free, Halide Free, and RoHS compliant. It is suitable for automated assembly and ideal for space-constrained designs in portable electronics and battery management systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $0.59 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 3,000+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The continuous drain current is 4A at ambient temperature (Ta).
The maximum on-resistance is 50mOhm at Vgs=10V and Id=4A.
The operating junction temperature range is -55°C to 150°C.
It is available in a SuperSOT-6 package (SOT-23-6 Thin, TSOT-23-6) for surface-mount assembly.
The datasheet claims it is Pb-Free, Halide Free, and RoHS Compliant, but the certification is unverified.
The maximum total gate charge is 8.1nC at Vgs=5V.