FDC658AP The FDC658AP from onsemi is a P-Channel Logic Level MOSFET with 30V drain-source voltage and 4A continuous drain current, featuring low on-resistance of 50mOhm at 10V gate drive.
Mfr Part #:

FDC658AP

Available from 9 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC658AP from onsemi is a P-Channel Logic Level MOSFET with 30V drain-source voltage and 4A continuous drain current, featuring low on-resistance of 50mOhm at 10V gate drive.
✓ Total Stock: 68,550 pcs
$ Price Range: $0.29 - $0.95

FDC658AP Available from 9 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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31,020 pcs
31020 pcs On Request 1 On Request On Request On Request On Request On Request
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18,000 pcs
18000 pcs On Request 1 On Request On Request On Request On Request On Request
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12,000 pcs
12000 pcs On Request 1 On Request On Request On Request On Request On Request
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5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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915 pcs
915 pcs On Request 1 On Request On Request On Request On Request On Request
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375 pcs
375 pcs On Request 1 On Request On Request 11+ On Request On Request
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224 pcs
224 pcs On Request 1 On Request On Request 10+ On Request On Request
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16 pcs
16 pcs On Request 1 On Request On Request NO DC On Request On Request

FDC658AP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC658AP Description

Short technical summary and product information.

The FDC658AP is a single P-Channel Logic Level MOSFET manufactured by onsemi using advanced POWERTRENCH technology. It is designed for battery power management applications, offering a drain-source voltage rating of 30V and a continuous drain current of 4A at ambient temperature. The device achieves a maximum on-resistance of 50mOhm at a gate-source voltage of 10V and 4A drain current, and 75mOhm at 4.5V and 3.4A, making it suitable for low-voltage switching.

 

This MOSFET features a low gate charge of 8.1nC at 5V gate drive and an input capacitance of 470pF at 15V drain-source voltage, enabling efficient switching in DC-DC converters and load switch applications. The device is rated for power dissipation up to 1.6W at ambient temperature and operates over a junction temperature range of -55°C to 150°C.

 

Packaged in a compact SuperSOT-6 (SOT-23-6 Thin, TSOT-23-6) surface-mount package, the FDC658AP is Pb-Free, Halide Free, and RoHS compliant. It is suitable for automated assembly and ideal for space-constrained designs in portable electronics and battery management systems.

FDC658AP Quick Information

Product Type: MOSFET
Canonical Name: FDC658AP P-Channel MOSFET
Subcategory: Single MOSFET

FDC658AP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC658AP Estimated Pricing

Qty Low High
1+ $0.95 $0.95
10+ $0.59 $0.59
100+ $0.38 $0.38
500+ $0.29 $0.29
3,000+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC658AP Features

  • P-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rating of 4A.
  • Low on-resistance of 50mOhm at 10V drive.
  • Low gate charge of 8.1nC for efficient switching.
  • Surface-mount SuperSOT-6 package.

FDC658AP Applications

  • Battery management and protection circuits.
  • Load switch for portable electronics.
  • DC-DC conversion and power management.
  • Power distribution in battery-powered systems.

FDC658AP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC658AP?

The drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The continuous drain current is 4A at ambient temperature (Ta).

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 50mOhm at Vgs=10V and Id=4A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FDC658AP available in?

It is available in a SuperSOT-6 package (SOT-23-6 Thin, TSOT-23-6) for surface-mount assembly.

Is the FDC658AP RoHS compliant?

The datasheet claims it is Pb-Free, Halide Free, and RoHS Compliant, but the certification is unverified.

What is the gate charge of the FDC658AP?

The maximum total gate charge is 8.1nC at Vgs=5V.

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