| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,593 pcs
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1593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor FDC6561AN-NB5S007A is a dual N-channel MOSFET from the PowerTrench® series. It features a maximum drain-to-source voltage of 30V and can handle a continuous drain current of 2.5A at 25°C. The Rds On is specified at a maximum of 95mOhm at 2.5A and 10V gate-source voltage.
This MOSFET is housed in a compact SOT-23-6 Thin, TSOT-23-6 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. Key electrical characteristics include an input capacitance of 220pF at 15V and a gate charge of 3.2nC at 5V. The gate threshold voltage is a maximum of 3V at 250µA.
Designed for various applications, this component offers efficient power management. Its surface mount capability makes it ideal for space-constrained designs. The RoHS status is reported as RoHS3 Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 2.5A.
The maximum Rds On is 95mOhm at 2.5A and 10V.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-6 Thin, TSOT-23-6 package.
The mounting type is surface mount.
The RoHS status is RoHS3 Compliant.