| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,593 pcs
|
37593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,148 pcs
|
8148 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
3,532 pcs
|
3532 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
1,524 pcs
|
1524 pcs | On Request | 1 | On Request | On Request | 2022 | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
370 pcs
|
370 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
265 pcs
|
265 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
168 pcs
|
168 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
|
92 pcs
|
92 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDC6561AN is a dual N-channel MOSFET manufactured by On Semiconductor using the advanced POWERTRENCH process. It is designed for applications requiring low on-state resistance and low gate charge for efficient switching. The device features a logic level gate, allowing operation at 4.5V gate drive. With a maximum drain-source voltage of 30V and continuous drain current of 2.5A (10A pulsed), it is suitable for low-power DC/DC conversion and load switching in battery-powered systems.
Key electrical specifications include a maximum Rds(on) of 95 mOhm at Vgs=10V and 145 mOhm at Vgs=4.5V. The gate threshold voltage is 3V maximum at 250µA. The device has a low typical gate charge of 2.1 nC and a maximum input capacitance of 220 pF at Vds=15V, contributing to fast switching performance.
The FDC6561AN is offered in the compact SuperSOT-6 package (SOT-23-6 Thin, TSOT-23-6), which is surface mount with a low profile of 1 mm. Thermal resistance junction-to-ambient is 130°C/W on a 0.125 in² pad of 2oz copper, and maximum power dissipation is 0.96W. The operating temperature range is -55°C to 150°C. The device is supplied in tape and reel packaging with 3000 pieces per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.01 | $1.01 |
| 10+ | $0.63 | $0.63 |
| 50+ | $0.47 | $0.47 |
| 100+ | $0.41 | $0.41 |
| 500+ | $0.32 | $0.32 |
| 3,000+ | $0.25 | $0.25 |
| 6,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30 V.
The package is SOT-23-6 Thin, also known as TSOT-23-6 or SuperSOT-6.
The operating temperature range is -55°C to 150°C (junction).
The datasheet states the device is Pb-Free, indicating RoHS compliance, but this has not been independently verified.
The maximum Rds(on) is 95 mOhm at Vgs=10V, Id=2.5A.
The maximum gate threshold voltage (Vgs(th)) is 3 V at Id=250µA.
The typical gate charge is 2.1 nC, with a maximum of 3.2 nC at Vgs=5V.