| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
54,000 pcs
|
54000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDC655BN-F40 is an N-Channel PowerTrench MOSFET manufactured by On Semiconductor. It features a maximum drain to source voltage of 30 V and a continuous drain current of 6.3 A (Ta). The device offers a low typical on-state resistance of 25 mOhm at 6.3 A and 10 V gate drive, with a gate threshold voltage of 3 V at 250 µA.
This MOSFET is designed for surface mount applications and is housed in a SOT-23-6 Thin / TSOT-23-6 package, with a SuperSOT-6 supplier device package option. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 800 mW (Tc).
The PowerTrench technology provides efficient switching performance, making it suitable for load switching and power management circuits. The device has an input capacitance of 620 pF at 15 V and a maximum gate charge of 13 nC at 10 V, supporting moderate speed switching applications.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.12 | $0.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The maximum continuous drain current is 6.3 A at ambient temperature (Ta).
The junction operating temperature range is -55°C to 150°C.
The package is SOT-23-6 Thin, TSOT-23-6, with a supplier device package of SuperSOT-6.