DistyParts Icon
FDC655BN N-Channel 30V MOSFET with 6.3A continuous drain current. Low on-resistance (25mOhm max at 10V) in a compact SuperSOT-6 surface mount package.
Mfr Part #:

FDC655BN

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel 30V MOSFET with 6.3A continuous drain current. Low on-resistance (25mOhm max at 10V) in a compact SuperSOT-6 surface mount package.
✓ Total Stock: 19,108 pcs
$ Price Range: $0.16 - $0.84

FDC655BN Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC655BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDC655BN Description

Short technical summary and product information.

This N-Channel Logic Level MOSFET from onsemi, part number FDC655BN, is designed for low voltage applications. It features a drain-source voltage of 30V and continuous drain current of 6.3A at 25°C. The device utilizes onsemi's advanced POWERTRENCH process to minimize on-state resistance.

 

Key electrical characteristics include a maximum on-resistance of 25mOhm at VGS=10V and 33mOhm at VGS=4.5V. Gate threshold voltage ranges from 1V to 3V. Gate charge is 15nC maximum. Input capacitance is 570pF at VDS=15V. These specs enable efficient switching in battery-powered and low-voltage circuits.

 

The device is housed in a TSOT-23-6 (SuperSOT-6) surface mount package, suitable for compact designs. It is Pb-free, Halide-free, and RoHS compliant. Operating temperature range is -55°C to +150°C. Maximum power dissipation is 1.6W at 25°C ambient. Thermal resistance is 78°C/W.

 

Applications include low voltage power management, load switching, and DC-DC converter circuits. The logic level gate drive allows direct interfacing with low voltage microcontrollers.

FDC655BN Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30V 6.3A MOSFET
Subcategory: N-Channel MOSFET

FDC655BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC655BN Estimated Pricing

Qty Low High
1+ $0.84 $0.84
10+ $0.52 $0.52
50+ $0.38 $0.38
100+ $0.33 $0.33
500+ $0.25 $0.25
3,000+ $0.18 $0.18
6,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC655BN Features

  • N-Channel MOSFET rated for 30V drain-source voltage.
  • Continuous drain current up to 6.3A at 25°C.
  • Low on-resistance of 25mOhm at 10V gate drive.
  • Logic level gate drive with threshold 1V to 3V.
  • Surface mount package in SuperSOT-6 (TSOT-23-6).

FDC655BN Applications

  • Ideal for low voltage power management circuits.
  • Used in battery-powered portable devices.
  • Suitable for load switching and DC-DC converters.
  • Logic level drive for direct microcontroller interface.

FDC655BN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V

What package is the FDC655BN available in?

SOT-23-6 Thin, TSOT-23-6 (SuperSOT-6)

What is the operating temperature range?

-55°C to +150°C

Is the FDC655BN RoHS compliant?

Yes, RoHS3 compliant

What is the maximum continuous drain current?

6.3A at 25°C ambient

What is the on-resistance at 10V gate drive?

25mOhm maximum

What is the gate threshold voltage range?

1V to 3V

Home
Account

Categories