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FDC653N N-Channel enhancement mode MOSFET with 30V drain-source voltage and 5A continuous drain current. Features low on-resistance of 35mΩ at 10V gate drive.
Mfr Part #:

FDC653N

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode MOSFET with 30V drain-source voltage and 5A continuous drain current. Features low on-resistance of 35mΩ at 10V gate drive.
✓ Total Stock: 30,188 pcs
$ Price Range: $0.28 - $1.30

FDC653N Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC653N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC653N Description

Short technical summary and product information.

The FDC653N is an N-Channel enhancement mode power MOSFET produced by On Semiconductor using DMOS technology. It is designed for low voltage applications requiring efficient switching and low power loss. Key electrical characteristics include a drain-source voltage rating of 30V, continuous drain current of 5A at 25°C ambient, and pulsed drain current up to 15A. The device features a low on-resistance of 35mΩ maximum at Vgs=10V and 55mΩ at Vgs=4.5V. Gate threshold voltage ranges from 1V to 2V. The MOSFET is housed in a SuperSOT-6 surface mount package (TSOT-23-6 thin) with copper lead frame for superior thermal performance. Maximum power dissipation is 1.6W at 25°C ambient. The device is Pb-Free and Halogen Free, RoHS compliant. Typical applications include notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.

FDC653N Quick Information

Product Type: MOSFET
Series: FDC653N
Canonical Name: N-Channel MOSFET, 30V, 5A, SuperSOT-6
Subcategory: Single MOSFET

FDC653N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC653N Estimated Pricing

Qty Low High
1+ $1.30 $1.30
10+ $0.82 $0.82
50+ $0.61 $0.61
100+ $0.54 $0.54
500+ $0.42 $0.42
3,000+ $0.30 $0.30
6,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC653N Features

  • N-Channel enhancement mode MOSFET.
  • Low on-resistance: 35mΩ at 10V gate drive.
  • High continuous drain current: 5A.
  • Surface mount SuperSOT-6 package.
  • Pb-Free and Halogen Free.

FDC653N Applications

  • Used in notebook computer power management.
  • Ideal for portable phone battery circuits.
  • Suitable for PCMCIA card power switching.
  • Designed for low voltage DC-DC converters.

FDC653N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

SuperSOT-6 (TSOT-23-6 thin).

What is the operating temperature range?

-55°C to 150°C.

Is the device RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

5A at 25°C ambient.

What is the on-resistance at 10V?

35mΩ maximum.

What is the gate threshold voltage?

1V to 2V.

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